Several possible mechanisms for phosphorus diffusion gettering (PDG) in silicon (Si) are evaluated. Float Zone (FZ) monocrystalline Si samples were intentionally contaminated with iron by ion implantation followed by a 1 h anneal at 900 °C to achieve a homogeneous iron distribution. Phosphorus gettering was then performed at different combinations of time and temperature. Depth-versus-concentration profiles of Fe, P, and O were measured by SIMS. The depth interval of Fe accumulation was found to be independent of the extension of the P profiles, unlike predictions from modeling of FexPy complex formation. The capture capability of P does not play an important role in PDG, still decreasing the P concentration below 6% in the surface source cause poor gettering efficiency. Hence accumulation of Fe close to the surface hinges on the presence of P, which is likely to be due to generation of vacancies during in-diffusion of high concentrations of P. The vacancies cause localized precipitation of oxygen in the highly P doped region. These oxygen precipitates act as gettering centers for Fe, as substantiated by a close correlation between the measured depth profiles of O and Fe after PDG. Our results suggest that interactions between oxygen, vacancies and metal impurities are the most crucial factors in PDG.

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The article presents a novel design for a distribution plate. The solution is suitable for a reactor vessel where a reactant gas needs to be maintained at a different temperature from the reaction chamber in order to avoid unwanted occurrences, such as clogging of the distribution plate. A normal procedure involves cooling of the distribution plate which is reported to either increase heat loss substantially or yield insufficient temperature in parts of the reaction chamber. The problem is especially important for reactors where the difference in reactant inlet temperature and desired reaction temperature is large. The investigated design utilized materials of very different thermal conductivity to only cool specific parts of the distribution arrangement and thereby minimize heat loss. Our system is a distribution plate for use in a fluidized bed reactor for silane pyrolysis. However, the solution is general and may be utilized in many types of vessels and chemical reactors.

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