A photoluminescence ͑PL͒ signal has been modeled under conditions of steady-state, depth-dependent excitation, ignored surface recombination, and neglected carrier diffusion. In spite of serious model limitations, the experimental data of PL vs. resistivity collected in the 0.0009 to 20 ⍀ cm range showed a reasonably good agreement with the simulation output. The PL signal reaches maximum within the 0.01 to 0.1 ⍀ cm range. At lower resistivity, the signal strongly depends on doping level and it can be used for doping striation monitoring. At higher resistivity, PL depends on the applied excitation levels and the concentration of deep recombination centers ͑material contamination͒. Within the entire range, PL can be used for imaging of extended defects, such as dislocations and precipitates.
Influence of growth interruption on inverted interface quality in single AlAsGaAs quantum wells grown by molecular beam epitaxy Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy Appl. Phys. Lett. 55, 50 (1989); 10.1063/1.101751Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
PL studies of oxygen precipitation related defects, stress relaxation related defects and doping striations in various silicon materials are presented. The sample spectrum includes a variety of dopant species, and the dopant concentration range covers several 1014 cm-3 to several 1019 cm-3. Lightly doped, precipitation-annealed polished wafers were intentionally contaminated with Fe, Ni and Cu. Several types of epi wafers based on heavily doped substrates have been investigated after full device processing. PL intensity in the investigated doping concentration range is controlled by three basic recombination mechanisms: radiative recombination competing with multi phonon Shockley-Read-Hall (SRH) and Auger recombination. SRH recombination is the major competing mechanism at low dopant concentration, and Auger recombination becomes important at increasing doping levels. Even though not yet fully understood, the PL technique applied in this study has generated practically useful results.
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