Defect Formation in Heavily As-Doped Cz Si

Rouvimov, Sergei; Kuytt, R.; Kearns, J.; Todt, V.R.; Orschel, B.; Siriwardane, Haresh; Shul’pina, I. L.; Rozgonyi, G. A.

doi:10.4028/www.scientific.net/ssp.95-96.17

Cited by 7 publications

(10 citation statements)

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“…In [2,9,10] the silicon single crystals 150 mm in diameter grown by Czochralski and doped by As, P and B separately during the growth were studied. Concentration of dopants was (2.5 -4.0)×10 19 cm -3 , 1.1×10 20 cm -3 and (4 -6.5)×10 18 cm -3 , respectively.…”

Section: Studied Samples and Methods Of Researchmentioning

confidence: 99%

“…Using these means, in [2,9,10] it was proposed to apply the combination of the section Lang method with X-ray diffractometry based on the Borrmann effect for diagnostics of silicon single crystals highly doped with As in the as-grown state. Hereafter, the experience of this study was spread on the silicon crystals highly doped with phosphorus and boron.…”

confidence: 99%

“…After [2,9,10], the combination of the section topography with X-ray diffractometry based on the Borrmann effect was applied to the silicon crystals highly doped with boron and subjected to technological annealings.…”

confidence: 99%

“…In particular, silicon single crystals with a high doping concentration are used in power electronics as the substrates for epitaxial structures. In this case, it is important the combination of large-square plates with high structural perfection and low resistivity [2]. The latter denotes a high concentration of impurities.…”

Section: Introductionmentioning

confidence: 99%

“…In the as-grown state, when there are a few defects or they have a very fine size and weakly deform crystal lattice, the standard diffraction methods are not sufficiently sensitive. In this work, the experience of application of more sensitive, based on interference effects of X-ray diffraction for diagnostics of highly doped crystals as well as after heat treatment in the as-grown state [2,9,10] is described.…”

Section: Introductionmentioning

confidence: 99%

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X-ray study of dopant state in highly doped semiconductor single crystals

pina

Kyutt²,

Ратников³

et al. 2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state -whether it is in the crystals in the form of solid solution or under various stages of its decomposition -are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements.

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Section: Studied Samples and Methods Of Researchmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

X-ray study of dopant state in highly doped semiconductor single crystals

pina

Kyutt²,

Ратников³

et al. 2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Growth and characterization of heavily doped silicon crystals

Scala

Porrini

Borionetti

2011

Cryst. Res. Technol.

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Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, largediameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron.

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