microstructure containing lots of triple points, and harsh operating conditions may make power IC's more vulnemble than standard devices. In this paper we present strongly reduced EM-lifetimes upon ABSTRACTThe combined effects of electromigration and thennomigration are studied. Significantly shorter electromigration lifetimes are observed in the presence of a temperature gradient. This cannot be explained hy thennomigation only, but is attxibuted to the effect of temperature grament on electromigration-induced failures.

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