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This paper reviews applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors. The assessment includes, for example, information on band structure and impurity levels derived from spectroscopic cathodoluminescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x-ray microanalysis, and mapping of carrier lifetimes and defects. Recent advances in both the various cathodoluminescence techniques and the processes leading to electron-beam-induced luminescence in semiconductors are reviewed. Possible future trends are also discussed.

The use of adhesive bonding in joining of materials with different characteristics is of major importance in a variety of microelectronic and photonic applications. The curing of such adhesives is also of great consequence, with the use of optical radiation for adhesive curing becoming the method of choice in various applications, especially bonding of components in microelectronics and fiber-optic assembly. This article reviews recent advances in the development of adhesives, their applications, and their curing methods using optical radiation; it also includes a brief overview of the adhesion mechanisms.

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Improved dielectric properties of lead zirconate titanate (PZT) films deposited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which were prepared by sol–gel processing. High dielectric constant (330 for stainless steel, 420 for titanium, and 450 for nickel foils), low dielectric loss (<2.2% for titanium and 8% for stainless steel), symmetric ferroelectric C–V characteristics and P–E curves were obtained. The LNO layers are shown to provide an effective diffusion barrier for Ni and Cr and to restrict oxide layer formation (i.e., TiOx or NiOx) between the PZT film and the metallic foils during annealing in air.

Thickness effect on the dielectric, ferroelectric, and piezoelectric properties of ferroelectric lead zirconate titanate thin films Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition

Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%<‖Δa‖/a<7.2%), to differences in thermal expansion coefficients (6.9×10−7<‖Δα‖<3.4×10−6 K−1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.

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