Cathodoluminescence Microscopy of Inorganic Solids

Yacobi, B. G.; Holt, D. B.

doi:10.1007/978-1-4757-9595-0

Cited by 454 publications

(328 citation statements)

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“…The constant k accounts for CL measurement artifacts such as absorption and total internal reflection of the photons as well as detector quantum efficiency. 6 The radiative recombination efficiency is the fraction of recombination events leading to photon emission. If is assumed to be independent of position x ͑this assumption will be discussed later on͒ Eq.…”

Section: ͑1͒mentioning

confidence: 99%

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A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

Mendis

Bowen

Jiang

2010

Applied Physics Letters

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Section: ͑1͒mentioning

confidence: 99%

“…6,7 For low beam currents the CL intensity is in general proportional to the number of excess carriers at steady state. A lower CL intensity is therefore expected for a probe incident close to a grain boundary, due to loss of some of the carriers to the grain boundary diffusion current.…”

mentioning

confidence: 99%

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

Mendis

Bowen

Jiang

2010

Applied Physics Letters

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“…Hence, our results evidence a nonhomogeneous Se distribution in the sample. Actually, a higher dopant concentration influences the dislocation CL contrast, giving rise to the bright haloes observed around the dark dislocation dots, 19,20 as generally observed in the area imaged in Fig. 3.…”

Section: Resultsmentioning

confidence: 69%

Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

Dı́az-Guerra

Vincent

Piqueras

et al. 2004

Journal of Applied Physics

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The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.

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“…6). In this case, a Lorenz curve fitting has been used for the deduction of spectral peaks from rare-earth activation due to low Huang-Rhys factor (S), while a Gaussian curve fitting has been adapted to deconvolute the spectral peaks of defect centers with relatively high S (e.g., Yacobi and Holt, 1990). According to Tsuchiya et al (2015), an annealing of the Malawi zircon up to 700°C decreases the intensity of yellow emission, suggesting that the emission component at around 2.20 eV should be attributable to radiationinduced defect centers.…”

Section: Of He + Ion-implanted Synthetic Zirconmentioning

confidence: 99%

Cathodoluminescence of synthetic zircon implanted by He<sup>+</sup> ion

et al. 2017

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He + ion implantation at 4.0 MeV, equivalent to energy of α particles from natural radioactive nuclei 238 U and 232 Th, has been conducted for undoped synthetic zircon. The cathodoluminescence (CL) of implanted samples was measured to clarify the radiation-induced effects. Unimplanted synthetic zircon shows pronounced and multiple blue emission bands between 310 nm and 380 nm, whereas the implanted samples have an intense yellow band at ~550 nm. The blue emission bands can be assigned to intrinsic defect centers formed during crystal growth. The yellow band should be derived from induced-defect centers by He + ion implantation, which might be related to the metamicitization originated from a self-induced radiation in natural zircon. The yellow band may be separated into two emission components at 1.96 eV and 2.16 eV. The emission component at 2.16 eV is recognized in both unimplanted and implanted samples, and its intensity increases with an increase in the implantation dose. The CL of zircon can be used as the geodosimeter.

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Cathodoluminescence Microscopy of Inorganic Solids

Cited by 454 publications

References 0 publications

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

Cathodoluminescence of synthetic zircon implanted by He<sup>+</sup> ion

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