Microstructural characterization of donor-doped lead zirconate titanate films prepared by sol–gel processing

Microstructural characterization of sol–gel derived Pb1−La TiO3 ferroelectrics

“…It can be seen that the compound PLT20 contains Pb, La, Ti, O and C. A quantitative analysis of XPS data using Pb 4f, La 3d, Ti 2p and O 1s peaks revealed a A/B/O atomic ratio of 1:1:3, indicating a good stoichiometry of the compound. For the PLT20, the measured binding energies of 458.23 eV for the Ti 2p 3/2 peak, 138.1 eV for the Pb 4f 7/2 peak and 529.23 eV for the O 1s peak are in agreement with reported data [10,14]. In the case of Ti 2p of PLT20 (see Fig.…”

Property improvement of 0.3Pb(Zn1/3Nb2/3)O3-0.7Pb0.96La0.04(ZrxTi1−x)0.99O3 ceramics by hot-pressing

“…28 The defect chemistry reaction is supposed to take place via the following equations, which reduce the concentration of oxygen vacancy, which is the main factor for pinning the mobility of domain walls. 29 Nb 2 O 5 + VÖ 2TiO 2 −→ 2Nb Ti + 5O O High values of piezoelectric coefficient d 33 and electromechanical coupling coefficient k p in poled PZT-based ceramics are believed to arise from the motion of domain walls under the action of applied field or stress. [30][31][32] Additionally, a small amount of doping Nb 5+ will increase the densification and reduce the grain sizes of ceramics during the sintering procedure.…”

Development of Sol-Gel Precursor System for Direct-Patternable PZT Ferroelectric Films Containing La as a Dopant

“…However the relatively different distribution of XRD intensity was observed with the La concentration. The increase of relative intensity of (100) and (200) diffraction peaks with increasing La concentration implies that La promoted the nucleation in PLZT films and the growth orientation of PLZT films was less influenced from Pt substrate [12][13][14]. Figure 2 shows the dielectric constant-voltage plots with applied voltage range from −8 to 8 V. The calculated dielectric constant of the PZT film with 0 mol% of La was 1236 at a maximum capacitance voltage.…”