Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers J. Appl. Phys. 97, 083101 (2005); 10.1063/1.1873035 Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique Rev. Sci. Instrum. 74, 550 (2003); 10.1063/1.1515888A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nmWe have investigated the dual role of interfacial defects in creating both nonradiative interface recombination and interface charge. Our studies are based on Ga 2 O 3 -GaAs interface structures with their unique properties such as low interface state density and radiative GaAs band-to-band recombination. The self-consistent analysis of the steady-state dependence of the spontaneous GaAs emission on excitation density provides all critical characteristics of interfacial defects simultaneously: the density of interface states, their capture cross sections, the interface recombination velocities, and the oxide charge.
GaAs homointerfaces have been grown by molecular beam epitaxy using the steps of GaAs growth, As cap deposition, wafer storage, thermal desorption of the As cap, and GaAs overgrowth. As cap layers with a thickness of up to 7.8 μm were deposited and the wafers were stored for 3–7 days in ultrahigh vacuum (UHV) or under atmospheric conditions. Nonradiative recombination originating from the GaAs homointerface of wafers stored in UHV could not be detected (interface recombination velocity S≪1000 cm/s), however, significant nonradiative recombination (S=104–105 cm/s) was found for all GaAs homointerfaces where wafer storage occurred under atmospheric conditions. This result demonstrates that the As cap deposition/removal process is inadequate for GaAs surface protection in a fabrication facility.
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