Integration of high-k gate stack systems into planar CMOS process flows

Huff, Howard R.; Ágarwal, Avinash Kumar; Kim, Y.; Perrymore, L. G.; Riley, D. Jason; Barnett, Joel; Sparks, Chris; Gebara, G.; Bowers, B.; Chen, P.J.; Lysaght, P.; Nguyen, B.; Lim, JaeEun; Lim, Sung Kyu; Bersuker, G.; Zeitzoff, P.; Brown, George; Young, C.D.; Foran, Brendan; Shaapur, F.; Hou, Tuo‐Hung; Lim, Cheol Hee; Alshareef, Husam N.; Borthakur, Swarnal; Derro, D.J.; Bergmann, R.; Larson, Larry; Gardner, Mark; Gutt, J.; Murto, Robert W.; Torres, K.; Jackson, Matthew I.

doi:10.1109/iwgi.2001.967538

Cited by 15 publications

(9 citation statements)

References 70 publications

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“…ALD has been actively investigated for use in integrated circuit (IC) manufacturing, [1][2][3][4] and is becoming a clear candidate for applications where high surface area and conformal coverage is critical. Although there are many and varied techniques for ALD in terms of the chemistries and process conditions used, metal-organic precursors are popular because of their good stability, low deposition temperature requirements, and concerns with residues from halide chemistries.…”

Section: Introductionmentioning

confidence: 99%

Plasma‐Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate

Eyck

Pimanpang

Juneja

et al. 2007

Chemical Vapor Deposition

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In this paper, a method for the plasma-enhanced (PE) atomic layer deposition (ALD) of palladium on air-exposed, annealed poly(p-xylylene) (Parylene-N, or PPX) is presented. Palladium is successfully deposited on PPX at 80°C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (Pd II (hfac) 2 ) as the precursor. By optimizing the mixture of hydrogen and nitrogen, the polymer surface is modified to introduce active sites allowing the chemisorption of the Pd II (hfac) 2 . In addition, enough free hydrogen atoms are available at the surface for ligand removal and Pd reduction, while at the same time, enough hydrogen atoms are consumed in the plasma to ensure there is no visible degradation of the PPX. X-ray photoelectron spectroscopy (XPS) measurements of the substrate after hydrogen/nitrogen plasma treatment at 50 W clearly show the presence of nitrogen bound to the substrate surface. XPS measurements of the deposited Pd films indicate good quality for both substrates, suggesting that the substrate temperature was low enough to prevent dissociation of the hfac ligand and adequate scavenging of the hfac ligand by the available atomic hydrogen. The remote hydrogen/nitrogen plasma enables Pd film deposition on polymer surfaces, which do not typically react with the Pd precursor, and are not catalysts for the dissociation of molecular hydrogen.

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Section: Introductionmentioning

confidence: 99%

Plasma‐Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate

Eyck

Pimanpang

Juneja

et al. 2007

Chemical Vapor Deposition

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“…Atomic layer deposition (ALD) has been actively investigated for use in integrated circuit manufacturing, [1][2][3][4] and is becoming a clear candidate for applications where high surface area and conformal coverage is critical. New work is even underway to improve the manufacturing compatibility of the process by increasing throughput and reliability of the systems used.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Pd on an Oxidized Metal Substrate

Eyck

Pimanpang

Bakhru

et al. 2006

Chem. Vap. Deposition

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A method is presented for the atomic layer deposition (ALD) of palladium on air-exposed tantalum and silicon without the use of a plasma. Palladium can be deposited on these substrates at 80°C using molecular hydrogen and palladium(II) hexafluoroacetylacetonate (Pd II (hfac) 2 ) as the precursor. In the case of palladium deposition on tantalum, the fluorine content is significantly reduced compared to previous results for thermal ALD. Use of a sufficiently long hydrogen pulse eliminates the noble metal substrate requirement typically needed for low deposition temperature ALD, and removes the requirement of plasma for deposition on oxidized metal surfaces. Rutherford backscattering spectrometry (RBS) measurements indicate a correlation between hydrogen pulse time and seed layer deposition rate, which is also substrate dependent. X-ray photoelectron spectroscopy (XPS) measurements indicate high-quality palladium film deposition on tantalum, suggesting the substrate temperature was low enough to prevent dissociation of the hfac ligand and adequate carbon and fluorine scavenging by the atomic hydrogen. The use of thermal ALD as opposed to a plasma process maintains the direction independence and high conformal nature of films produced by ALD, enabling deposition on highly varied topographies and three-dimensional porous structures.

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“…The challenge of continued scaling of conventional SiO 2 gate dielectrics has led to the investigation of high-k gate dielectric materials to replace conventional SiO 2 and SiON films. The higher dielectric constants allow physically thicker films to be employed as gate dielectrics, preserving gate capacitance while limiting increases in gate leakage due to direct tunneling and reliability deficiencies of thinner films (SiO 2 below 20 Å).…”

Section: Introductionmentioning

confidence: 99%

“…The higher dielectric constants allow physically thicker films to be employed as gate dielectrics, preserving gate capacitance while limiting increases in gate leakage due to direct tunneling and reliability deficiencies of thinner films (SiO 2 below 20 Å). Metal oxides such as HfO 2 and HfSiOx have been studied as promising high k candidates [1].…”

Section: Introductionmentioning

confidence: 99%

“…Deposition techniques have been shown to affect the quality of the high k dielectric films [2]. One such technique is atomic layer deposition (ALD), which has gained acceptance as a thin film deposition technique in semiconductor device manufacturing due to its excellent across wafer thickness uniformity and ability to finely craft film compositions.…”

Section: Introductionmentioning

confidence: 99%

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