Metastable Ge 1Ϫy C y alloys were grown by molecular beam epitaxy as homogeneous solid solutions having a diamond lattice structure. The substrates were ͑100͒ oriented Si wafers and the growth temperature was 600°C. We report on measurements of the composition, structure, lattice constant, and optical absorption of the alloy layers. In thick relaxed layers, C atomic fractions up to 0.03 were obtained with a corresponding band gap of 0.875 eV. These alloys offer new opportunities for fundamental studies, and for the development of silicon-based heterostructure devices.