Inorganic
hole-transport materials (HTMs) have been frequently
applied in perovskite solar cells (PSCs) and are a promising solution
to improve the poor stability of PSCs. In this study, we investigate
solution-processed copper indium gallium disulfide (CIGS) nanocrystals
(NCs) as a dopant-free inorganic HTM in n–i–p type PSCs.
Moreover, Cs0.05(MA0.17-FA0.83)0.95Pb(I0.83Br0.17)3 mixed-halide
perovskite with proper crystalline quality and long-time stability
was utilized as the light-absorbing layer under ambient conditions.
To optimize the cell performance and better charge extraction from
the perovskite layer, the Ga concentration in the Cu(In1–X
Ga
X
)S2 composition
was changed, and the X value was altered between
0.0 and 0.75. It was shown that the CIGS band gap enhances with increasing
Ga content; thus, with tunable band gaps and engineering of the energy
level alignment, a better collection of photogenerated holes and a
reduced electron–hole recombination rate could be achieved.
The maximum power conversion efficiency of 15.6% was obtained for
the PSC with Cu(In0.5Ga0.5)S2 hole-transport
layer composition, which is the highest efficiency reported so far
for CIGS-based dopant-free PSCs. This value is very close to the efficiency
of devices fabricated with doped spiro-OMeTAD as an organic HTM. Additionally,
the stability of nonencapsulated PSCs was studied, and CIGS-based
devices demonstrated 70% retention after 90 days of aging in the dark
and in 50% relative humidity conditions. This result is quite better
than the similar measurements for the doped spiro-OMeTAD-based devices.
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