Significant efforts have been reported on copper(I) thiocyanate
(CuSCN) as an efficient hole-transporting layer (HTL) for perovskite
solar cells. Surprisingly, its higher chalcogen analogue copper (I)
selenocyanate (CuSeCN) is unexplored yet, even though CuSeCN has been
shown to have different properties compared to CuSCN because of its
different electronegativity, polarizability, and size (Se vs S atoms).
In this work, we report the synthesis of CuSeCN as an HTL in perovskite
solar cells via low-temperature solution-processable deposition from
an aqueous ammonia solution. The transparency and thermal stability
of CuSeCN films were examined by the deposition of thin films from
an aqueous ammonia solution under ambient conditions. The structural,
electrical, optical, and morphological properties of the CuSeCN films
were characterized by X-ray diffraction, XPS, FTIR, cyclic voltammetry,
UV–vis–NIR spectroscopy, and field emission scanning
electron microscopy. A single-step fast deposition–crystallization
method was used to fabricate low-temperature CuSeCN-based inverted
planar perovskite solar cells, with device architecture indium tin
oxide (ITO)/CuSeCN/CH3NH3PbI3/PC61BM/BCP/Ag. Furthermore, to examine the effect of the thickness
of the HTL on device performance, three different concentrations of
CuSeCN solution were used for thin-film deposition in perovskite solar
cells. The annealing temperature of the HTL films was optimized to
obtain the highest possible device performance. A maximum power conversion
efficiency (PCE) of 13.59% (V
oc = 0.99
V, J
sc = 18.8 mA/cm2, and FF
= 0.73) was achieved with 7.5 mg mL–1 of CuSeCN
solution, along with negligible J–V hysteresis and reproducibility of device performance.