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A compact 2.45 GHz surface-wave ion source has been developed for the production of stable beams from gaseous feed materials. The source has been operated with two different geometries of surface wave generation, that is, a dielectric disk on ground plane structure and a dielectric disk between the parallel plate structure with a holey top plate. The designer can control the intensity of the emitted microwave simply by varying the thickness of the dielectric plate. The sources have been operated with three different thicknesses of the dielectric plate: td=10, 15, and 20 mm. td=10 mm is the optimum coupling condition. Moreover, the ion beam current of the holey-plate structure is 1.5 times as high as that of the dielectric disk structure.

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A wafer level chip-scale-package (WLCSP) is expected to reduce the manufacturing cost of CSPs, but reliability of a solder joint for a large chip size of about 100 mm 2 without underfill assembly is still in question. To meet this needs, we have developed a highly reliable and low-cost WLCSP named wafer process package phase 2 (WPP-2). The package includes a built-in stress-relaxation layer for reducing the strain of the solder bumps. To lower the manufacturing cost of the package, the stress-relaxation layer is formed by printing. The Young's modulus and the thickness of the stressrelaxation layer were optimized by finite element analysis.