The aims of the New SUBARU project are to promote industrial applications in the VUV and soft X-ray region and to develop research and development towards new light sources. The main facility of the New SUBARU project is the 1.5 GeV electron storage ring which is under construction at the SPring-8 site in Harima Science Garden City, Japan. The storage ring is quasi-isochronous and has variable momentum dispersion for the deep study of beam dynamics in very short bunches.
Graphenes of nanometer-scale grain size (nanographenes) were synthesized using in-liquid plasmas with alcohols or hydrocarbons. This method of nanographene synthesis showed a trade-off relationship between crystallinity and synthesis rate. The high crystallinity of nanographenes synthesized with alcohols was evaluated from the small full width at half maxima (FWHM) of the G band in Raman scattering spectra. On the other hand, in the case of using hydrocarbons such as n-hexane and benzene, a significantly high synthesis rate was obtained but the crystallinity of nanographenes was low. It was found that hydroxyl groups and oxygen atoms of liquid sources play important roles in determining the crystallinity of synthesized nanographenes.
Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiO2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. The formed oxidized titanium line has resistivity of 2×104 ohm cm, which is a value seven orders of magnitude higher than that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found to be δE
g=0.25 eV.
Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS2 using the gaseous precursors WF6 and H2S, augmented by the Na-assistance method. When Na was present during growth, the process created triangle-shaped WS2 crystals that were 10 μm in size and exhibited semiconducting characteristics. By contrast, the Na-free growth of WS2 resulted in a continuous film with metallic behaviour. These results clearly demonstrate that alkali-metal assistance is valid even in applications of gas-source CVD without oxygen-containing species, where intermediates comprising Na, W, and S can play an important role. We observed that the WS2 crystals grown by gas-source CVD exhibited a narrow size distribution when compared with crystals grown by conventional solid-source CVD, indicating that the crystal nucleation occurred almost simultaneously across the substrate, and that uniform lateral growth was dominant afterwards. This phenomenon was attributed to the suppression of inhomogeneous nucleation through the fast and uniform diffusion of the gas-phase precursors, supported by the Na-assisted suppression of the fast reactions between WF6 and H2S.
We studied the oxide charges and traps within nitrided Hf-silicate (HfSiON)∕SiO2 gate stacks processed with high-temperature annealing with a spectroscopic technique by using high spatial resolution scanning capacitance microscopy. Spectroscopy was performed by detecting the static capacitance (dC∕dZ) between a conductive probe and the sample while sweeping the sample bias. The dC∕dZ image and spatially resolved dC∕dZ-V spectrum revealed the existence of positive fixed charges within HfSiON and interface trap charges between the SiO2 underlayer and Si substrate. We also observed a transient electron trap process from the conductive probe to the HfSiON film as abrupt discontinuities in the dC∕dZ-V spectrum and with bias-induced topography change of the HfSiON surface. These oxide charges and trap sites distribute inhomogeneously within HfSiON∕SiO2 gate stacks, and the origin of these charged defects is ascribable to phase separation induced by high-temperature postdeposition annealing.
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