CaCu 3 Ti 4 O 12 powders were synthesized by sonochemical-assisted process via a precursor solution of calcium nitrate trihydrate, titanium isopropoxide and copper nitrate trihydrate. The reaction process was conducted with the assistance of intense sonication using Sonics Model VCX 750 until the completely precipitated product was reached, followed by calcinations process. The physical microstructures, morphologies of as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. From XRD observation, it is evident that CaCu 3 Ti 4 O 12 ceramic could be obtained by this synthesis process. It was additionally revealed that its crystallization and particle size was strongly dependent on the reaction time and calcinations temperature.
The CMOS fabrication technology requires both nchannel (NMOS) and p-channel (PMOS) transistors be built on the same substrate. To ensure the reliability of the circuit performance over the temperature range, the circuits must be designed accommodate the basic variations parameters as a function of parameter. The temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27-125 degree Celsius are presented. The results show that the threshold voltage temperature coefficient (TCV) of both devices increased as the channel width decreased. PMOS has a larger affect more than NMOS because of a buried channel device. The Voltage Transfer Characteristics (VTC) of an inverter shows a symmetrical gate at W R is 2.0. However, the narrow channel effect, threshold voltage matching and ratio B R are key problem of CMOS inverter worked. Finally, these results will support the process engineer, circuit designer to improve device performance in the next fabrication.
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