The effects of temperature and device demension of MOSFETs on the DC characteristics of CMOS inverter

Abstract

The CMOS fabrication technology requires both nchannel (NMOS) and p-channel (PMOS) transistors be built on the same substrate. To ensure the reliability of the circuit performance over the temperature range, the circuits must be designed accommodate the basic variations parameters as a function of parameter. The temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27-125 degree Celsius are presented. The results show that the threshold voltage temperature coefficient (TCV) of both devices increased as the channel width decreased. PMOS has a larger affect more than NMOS because of a buried channel device. The Voltage Transfer Characteristics (VTC) of an inverter shows a symmetrical gate at W R is 2.0. However, the narrow channel effect, threshold voltage matching and ratio B R are key problem of CMOS inverter worked. Finally, these results will support the process engineer, circuit designer to improve device performance in the next fabrication.

Gamma-radiation Induced Degradation of the Electrical Characteristics of NMOSFETs

“…The devices were designed and fabricated at Thai Micro Electronics Center (TMEC) in 0.8 µm Complementary Metal Oxide Semiconductor (CMOS) technology fabrication [6], starting with ptype substrate of 25 Ω-cm. A self-aligned n+ polysilicon gate process was used, and the Short Channel Effect (SCE) and the Narrow Channel Effect (NCE) were excluded.…”

A New Mismatch Model of Temperature and Narrow Channel Width Dependence on Threshold Voltage of MOSFETs

“…PMOS and NMOS were made in the 0.8 µm CMOS twin well CMOS technology at TMEC [9]. The measurement system consist of probe station Cascade Microtech M150 model, Semiconductor Device analyzer B1500A and ERS Aircool SP72 model.…”

“…The threshold voltage (V TH ) is the one important parameters of MOSFETs. The temperature dependence on the threshold of MOSFETs have been determined in the reference literature [1][2][3][4][5][6][7][8][9]. In previous published work, the threshold voltage dependence of temperature parameter (TCV) is introduced and the usage of TCV is quite simple [1,2].…”

“…But not many researcher or published work studied on the threshold voltage dependence of temperature parameter of narrow channel MOSFETs. In present work, the threshold voltage dependence of temperature is not the same value for the difference dimension of MOSFETs [8][9][10][11]. Then we try to develop the new mismatch model of threshold voltage based on the spice level3 model and BSIM3 model over the operating temperature.…”

Establishment of connection between parameters of CMOS inverter for Staticforce Optimization

“…Current research deals with the dynamic behavior of theinvertor and transistor sizing, which is based on the equivalent digital model. A number of detailed analyses in digital circuits( [1], [4], [8]- [11]) have been reported ( [11]- [13]). The inverteroperating in a strong inversion is known.…”