Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors Appl. Phys. Lett. 86, 082102 (2005); 10.1063/1.1866507 Effects of annealing temperature on the characteristics of HfSi x O y / HfO 2 high-k gate oxides Characteristics of HfO 2 / HfSi x O y film as an alternative gate dielectric in metal-oxide-semiconductor devices
A novel replacement gate design with 1.5-3 nm oxide or remote plasma nitrided oxide gate insulators for sub-lOOnm Al/TiN or W/TiN metal gate nMOSFETs is demonstrated. The source/drain regions are self-aligned to a poly gate which is later replaced by the metal gate. This allows the temperatures after metal gate definition to be limited to 450 OC. Compared to pure SOz, the nitrided oxides provide increased capacitance with less penalty in increased gate current. A saturation transconductance (g,) of 1000 mS/mm is obtained for L,,,=70 nm and tox=1.5 nm. Peak cutoff frequency (fT) of 120 GHz and a low minimum noise figure (NF~") of 0.5 dB with associated gain of 19 dB are obtained for tox = 2 nm and L,,,=80 nm.
The effects of trace amounts of Fe and Cu in p-and n-type silicon were investigated with microwave photoconductance decay and surface photovoltage. The wafers received controlled amounts of surface contamination of Fe and Cu that are relevant for ultralarge scale integrated technologies. The substrate doping type has a strong impact on the effect of the metallic impurities. Fe, as expected, strongly degrades the minority carrier lifetime of p-type substrates. On the other hand, the impact of Fe on n-type silicon is at least one order of magnitude lower than on p-type. In contrast, Cu is highly detrimental to n-type material, but has no significant impact on the minority carrier properties of p-type silicon for the contamination levels studied.
Structural and surface potential characterization of annealed HfO 2 and ( HfO 2 ) x ( SiO 2 ) 1 -x films Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemicalvapor-deposited Hf-O films on Si J. Appl. Phys. 95, 5042 (2004); 10.1063/1.1689752Growth and effects of remote-plasma oxidation on thin films of HfO 2 prepared by metal-organic chemical-vapor deposition J.
In this study the impact of temperature and metal contamination on the stability of hydrogen peroxide in the two most common wet chemical cleaning mixtures for wafer process operations has been investigated. The stability of the caustic mixture ( NH4OH/H2O2/H2O) was found to be very sensitive to certain metallic contaminations in the sub-ppb range, while the stability of the acid mixture ( HCl/H2O2/H2O) is mainly influenced by non metallic, anionic components of the solution itself. We observed also a strong oscillating behaviour of the rate of the oxygen gas evolution caused by the decomposition of H2O2. Furthermore it was found, that the oxygen gas bubbles, formed by the decomposition of hydrogen peroxide cause a certain kind of micro-roughness on the silicon surface through a micro masking mechanism. In a series of experiments we could prove that this kind of surface roughness has a significant impact on the integrity of thin gate oxides.
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