Application of HfSiON as a gate dielectric material

Abstract

Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors Appl. Phys. Lett. 86, 082102 (2005); 10.1063/1.1866507 Effects of annealing temperature on the characteristics of HfSi x O y / HfO 2 high-k gate oxides Characteristics of HfO 2 / HfSi x O y film as an alternative gate dielectric in metal-oxide-semiconductor devices

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

“…However, since N is mainly incorporated into metastable configurations in the oxide and silicate films [9][10][11] (pseudo-ternary character, ͓HfO 2 ͔ x ͓͑SiO 2 ͒ 1−y ͑Si 3 N 4 ͒ y ͔ 1−x ), the integration of N containing high-k dielectrics into the metal oxide semiconductor field effect transistor fabrication flow relies on the stability of N during further high temperature processing steps. Indeed, structural degradation, more specifically recrystallization of the amorphous high-k films, 4 has been observed in those regions of the high-k film from where the N is low either intentionally or as a result of annealing in an oxidizing environment. Nitrogen loss also gives rise to lower capacitance which is usually a result of a lower dielectric constant.…”

“…These films were submitted to different rapid thermal annealing (RTA) sequences at 1000°C in vacuum, N 2 flow, and 7 mbar of 97% 18 O-enriched O 2 atmospheres (vacuum-, N 2 -, and 18 O 2 -annealing), respectively, for different times. The aim of the present study is an atomic scale observation and understanding of the N losses reported previously, 4,8 as well as the oxygen and nitrogen diffusion and eventual incorporation into the Si substrate during the different thermal processing routes.…”

“…Some of the key topics of concern are: density of interface states, reliability, chemical and structural stability, oxidation of the Si substrate, diffusion of metallic species into the active semiconductor region and transport of Si into the high-k film. 1-3 Recent investigations [4][5][6][7][8][9] indicate that incorporation of nitrogen into the hafnium oxide and silicate films either during or after deposition, by plasma or thermal treatments, leads to superior thermal stability, overcoming many of the abovementioned difficulties. However, since N is mainly incorporated into metastable configurations in the oxide and silicate films [9][10][11] (pseudo-ternary character, ͓HfO 2 ͔ x ͓͑SiO 2 ͒ 1−y ͑Si 3 N 4 ͒ y ͔ 1−x ), the integration of N containing high-k dielectrics into the metal oxide semiconductor field effect transistor fabrication flow relies on the stability of N during further high temperature processing steps.…”

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

“…Higher permittivity has been obtained with Ti incorporation while leading to a gate-leakage increase [21]. On the other hand, N incorporation in HfO 2 results in beneficial characteristics including reduction of gate-leakage current, improved thermal stability of the dielectric material, due to suppression of the onset of dielectric crystallization [22,23]. In view of the above two effects on Hf-based oxides, it is expected that better dielectric properties could be achieved by simultaneously incorporating Ti and N into La 2 O 3 thin film.…”

Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks

“…A number of experimental works have pointed out that HfSiON exhibits not only good electrical properties in terms of leakage current 2,3 and reliability 4 but also presents a high protection barrier against boron penetration. 5 In addition, the inclusion of a thin interfacial layer of SiON between the high-and the Si substrate further improves the system's properties by providing better thermal stability and a lower density of interface states. 6 While the conduction characteristic in the fresh stack has been ascribed to tunneling, 7 there is no clear picture about the electron transport mechanism after the occurrence of a breakdown ͑BD͒ event.…”