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In this paper, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect. In the model development, first thickness dependent model of the baseline 2D FET is developed, and later NC effect is included in the model using the Landau-Khalatnikov (L-K) relation. To validate baseline model behavior, density functional theory (DFT) calculations are taken into account to obtain numerical data for the K and Λ valley dependent effective masses and differences in the energy levels of N-layer (N = 1, 2, 3, 4, and 5) MoS2. The calculated layer dependent parameters using DFT theory are further used in a drift-diffusion simulator to obtain electric characteristics of the baseline 2D FET for model validation. The model shows excellent match for drain current and total gate capacitance of baseline FET and NCFET against the numerical simulation.

Flexible and thin-film humidity sensors are currently attracting the attention of the scientific community due to their portability and reduced size, which are highly useful traits for use in the Internet o Things (IoT) industry. Furthermore, in order to perform efficient and profitable mass production, it is necessary to develop a cost-effective and reproducible fabrication process and materials. Green fabrication methods and biodegradable materials would also minimize the environmental impact and create a sustainable IoT development. In this paper, flexible humidity sensors based on a common salt (NaCl) sensing layer are reported. Our sensors and the fabrication techniques employed, such as dip and spray coating, provide a biodegradable, low cost, and highly reproducible device. One of the sensors reported presents a typical resistive behaviour from 40% RH up to 85% RH with a sensitivity of −0.21 (Z/%RH). The performance of the sensors obtained with several fabrication techniques is studied and reported at multiple frequencies from 100 Hz to 10 MHz, showcasing its versatility and robustness.

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