High-quality broadband ultrasound transducers yield superior imaging performance in biomedical ultrasonography. However, proper design to perfectly bridge the energy between the active piezoelectric material and the target medium over the operating spectrum is still lacking. Here, we demonstrate a new anisotropic cone-structured acoustic metamaterial matching layer that acts as an inhomogeneous material with gradient acoustic impedance along the ultrasound propagation direction. When sandwiched between the piezoelectric material unit and the target medium, the acoustic metamaterial matching layer provides a broadband window to support extraordinary transmission of ultrasound over a wide frequency range. We fabricated the matching layer by etching the peeled silica optical fibre bundles with hydrofluoric acid solution. The experimental measurement of an ultrasound transducer equipped with this acoustic metamaterial matching layer shows that the corresponding −6 dB bandwidth is able to reach over 100%. This new material fully enables new high-end piezoelectric materials in the construction of high-performance ultrasound transducers and probes, leading to considerably improved resolutions in biomedical ultrasonography and compact harmonic imaging systems.

We report the first study of nanoscale integrated photonic devices constructed with semiconductor-insulator-metal strip (SIMS) waveguides for use at telecom wavelengths. These waveguides support hybrid plasmonic modes transmitting through a 5-nm thick insulating region with a normalized intensity of 200-300 μm(-2). Their fundamental mode, unique transmission and dispersion properties are consistent with photonic devices for guiding and routing of signals in communication applications. It has been demonstrated using Finite Element Methods (FEM) that the high performance SIMS waveguide can be used to fabricate deep sub-wavelength integrated plasmonic devices such as directional couplers with the ultra short coupling lengths, sharply bent waveguides, and ring resonators having a functional size of ≈1 µm and with low insertion losses and nearly zero radiation losses.

No abstract

Ultraviolet (UV) photodetectors with high responsivity and speed are highly desirable for imaging and remote sensing applications. Limited by the crystalline quality of a GaN-based material, which is ideal for UV photodetection, the further improvement of the performance is minimal. A hybrid graphene/unintentionally doped (UID) GaN UV photodetector with both high responsivity and high speed is reported. Holes in graphene, which are induced by the photogenerated electrons trapped at the graphene/UID GaN interface according to the capacitive effect, have a long lifetime owing to the electron-hole pair separation in space. Graphene acts as a carrier transport channel and greatly increases the charge collection efficiency under an external bias voltage. The responsivity of a hybrid graphene/UID GaN photodetector with a photosensitive area of 2 mm2 reaches 5.83 A/W at −10 V with a specific detectivity of ∼1011 Jones. The response time is ∼5 ms, which is faster than that of traditional GaN photodetectors. These results will provide a feasible route to UV detection with high performance.