A versatile detector for total fluorescence and electron yield experiments Rev. Sci. Instrum. 83, 093109 (2012) Sine gating detector with simple filtering for low-noise infra-red single photon detection at room temperature J. Appl. Phys. 112, 063106 (2012) Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films APL: Org. Electron. Photonics 5, 209 (2012) Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films
InAs 0.91 Sb 0.09 lattice matched to a GaSb substrate by molecular beam epitaxy (MBE) is characterized by photoluminescence and photoconductivity measurements. Absorption, photoluminescence and spectrally resolved dc photoconductivity measurements lead to a band gap expression for InAs 1−x Sb x , as a function of the Sb content x, where 0.06 < x < 0.12 and the material is nearly lattice matched to GaSb. The expression is in good agreement with recent results focusing on this range of Sb content, but deviates significantly from the one known from the literature and covering the entire Sb composition range. The carrier lifetime was measured by stationary and time resolved photoconductivity with an excitation source at 3.39 µm. We report Shockley-Read limited lifetimes as long as 200 ns, which indicate the high quality of the material. The accuracy and consistency of these optical characterization techniques allow a reliable comparison of samples and provide a guide for the optimization of growth parameters.
We describe a mid-JR photovoltaic detector using InAsSb as active material, grown by MBE on a GaSb substrate. The purpose of this study is to show that quantum detectors can offer an alternative to thermal detectors (pyroelectric or resistive holometers) for high temperature (near room temperature) operation. With a 9% Sb content, InAsSb is lattice matched to GaSh and thus provides an excellent material quality, with Shokley-Read lifetimes of the order of 200 ns as measured by photoconductive gain measurements as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelength of 5 microns at room temperature. This makes InAsSb an ideal candidate for room temperature detection in the 3-5 microns atmospheric window. Photovoltaic structures are characterized by current voltage characteristics as a function of temperature. Using the absorption value obtained on the test samples, a detectivity of 7X109 Jones can he obtained at a temperature of 250 K, which can easily be reached with Peltier cooling. This leads to a NETD lower than 80 mK.
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