MBE growth of room-temperature InAsSb mid-infrared detectors

Marcadet, X.; Rakovska, Anna; Prevot, I.; Glastre, G.; Vinter, B.; Berger, V.

doi:10.1016/s0022-0248(01)00782-5

Cited by 39 publications

(23 citation statements)

References 9 publications

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“…These results are in good agreement with the data on Sb incorporation in the AlGaAsSb alloys [13]. For low Sb content the In(Ga)AsSb alloy composition linearly depends on the Sb BEP, similar to that reported recently by Marcadet et al [1]. At higher Sb fluxes, the dependence saturates, confirming previously published data [14].…”

Section: Resultssupporting

confidence: 93%

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InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

et al. 2005

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We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4 µm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5 µm has been observed at 80 K.

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Section: Resultssupporting

confidence: 93%

“…The InAs y Sb 1−y alloys with a Sb content near 9% (lattice matched to GaSb) are widely used for light emitting diodes [1] and low-cost room-temperature detectors [2]. The InAs y Sb 1−y alloys with the high Sb content are used for Hall-sensors [3] and as cooled far-IR detectors [4].…”

Section: Introductionmentioning

confidence: 99%

InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

et al. 2005

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“…A wide range of electronic bandgaps, bandgap offsets and electronic barriers is possible with these materials. These properties and the high electron mobility in these materials enable a wide variety of optoelectronic and electronic devices [3][4][5][6]. Antimonide materials are also used in thermophotovoltaics, which involves the generation of electricity from a heat source using a semiconductor device [7][8].…”

Section: Introductionmentioning

confidence: 99%

Auger and radiative recombination coefficients in 0.55-eV InGaAsSb

Kumar

Borrego

Dutta

et al. 2004

Journal of Applied Physics

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A radio-frequency (RF) photoreflectance technique, which senses changes in sample conductivity as carriers recombine following excitation by a laser pulse, has been used to measure the recombination parameters in 0.55 eV InGaAsSb lattice matched to GaSb. Doubly-capped lifetime structures with variable active layer thicknesses are used to extract the surface recombination velocity (SRV), while analysis of the samples with different doping concentrations is used to obtain Auger (C) and radiative (B) recombination parameters. Parameter extraction for the samples evaluated gives C = 1 ± 0.4 x 10 -28 cm 6 /s and B = 3 ± 1.5 x 10 -11 cm 3 /s for 0.55 eV InGaAsSb lattice matched to GaSb. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples show very good agreement with values obtained from low-level injection conditions.

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“…Mid-infrared detectors are very important for application in gas sensors, ultralow-loss optical fiber communications, common pollutants, and industrial process control [1][2][3][4]. The InAsSb ternary alloy has become a very promising material due to its having the smallest energy band gap of 0.1 eV, high electron and hole mobility, and small effective mass among the III-V compound semiconductors [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

et al. 2009

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InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epilayers were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) transmittance measurements and scanning electron microscopy (SEM). The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.

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MBE growth of room-temperature InAsSb mid-infrared detectors

Cited by 39 publications

References 9 publications

InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

Auger and radiative recombination coefficients in 0.55-eV InGaAsSb

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

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