Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

Abstract

InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epilayers were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) transmittance measurements and scanning electron microscopy (SEM). The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.

High-purity InAs1-Sb epilayer grown by a LPE technique

“…1. Apparently, the experimental data is fitted well with a Gauss function, and the full-width at halfmaximum (FWHM) of the (400) rocking curve is extracted to be 152 arcsec, which indicates the lattice perfection of the epilayer [9].…”

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

“…Indium was chemically etched using a mixture solution of HCl and H 2 O (1:1), and InAs substrates were etched in a solution of H 2 O 2 and HNO 3 (5:3) before putting them into the LPE system. The growth process of one-step LPE technology has been provided in the previous paper [7]. Before the epitaxial growth, the furnace temperature was kept at 465°C for 4 h to dissolve the source materials and sufficiently homogenize the solution components.…”

“…However, they suffer natural drawbacks, such as slow response, big power dissipation, and unwanted 1/f noise [2]. Among III-V compounds, the InAsSb ternary alloy has the attractive advantages of small band gap of 0.1 eV, high electron and hole mobilities, low electron effective mass, and good operating characteristics at room temperature [4][5][6][7]. InAsSb materials grown on InAs and GaSb substrates are a promising candidate for mid-IR detectors.…”

“…We have reported that InAsSb epilayers with cutoff wavelengths of 4.5 to 4.8 μm were successfully grown on InAs substrates by one-step LPE technology [7]. In this study, the high-quality n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were further investigated using one-step LPE.…”