Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

Abstract

n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy (LPE) technology. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) patterns showed the mirror smooth surface, flat interface, and good crystalline quality of the heterojunctions. Fourier transform infrared (FTIR) transmittance spectra exhibited that the cutoff wavelengths of InAsSb epilayers reach 4.8 μm. The standard current-voltage (I-V) characteristics with a high differential-resistance-area-product at zero bias (R 0 A) of 1.02×10 -1 Ω·cm 2 at room temperature indicate that the fine p-n junctions have been obtained.