Room temperature InAsSb photovoltaic midinfrared detector

Abstract

A versatile detector for total fluorescence and electron yield experiments Rev. Sci. Instrum. 83, 093109 (2012) Sine gating detector with simple filtering for low-noise infra-red single photon detection at room temperature J. Appl. Phys. 112, 063106 (2012) Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films APL: Org. Electron. Photonics 5, 209 (2012) Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films

Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (0 0 1)

“…Lee et al [5] first proposed InAsSb superlattice structures for the fabrication of tunable electro-optic devices. Since then, there have been many reports on antimony-based material growth and band gap engineering of the devices for remote sensing of atmospheric gases, molecular spectroscopy and free space communications [4,[6][7][8]. The smallest band gap ($0.1 eV) ternary alloy among the III-V semiconductors has been demonstrated as possible alternate to HgCdTe.…”

Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

“…InAs 1−x Sb x has the smallest band gap among all conventional III-V alloys [1][2][3], which has attracted extensive interest for long-wavelength (8-12 m) optoelectronic applications. In recent years, ternary InAs 1−x Sb x has shown its potential usefulness for 8-12 m room-temperature devices [4][5][6]. The InAs x Sb 1−x is also useful for high-speed electron devices because of its very high electron mobility.…”

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

“…2,4,5 As a ternary alloy it is possible to define the compositional dependence of a parameter T ͑such as E 0 or ⌬ 0 ͒ using T = xB 1 + ͑1−x͒B 2 − x͑1−x͒C, where B 1 is the binary end-point InSb value, B 2 the InAs value, and C a bowing parameter which describes any deviation from the virtual crystal approximation. 6 A range of studies of E 0 in InAs 1−x Sb x indicates that C lies between 570-690 meV [7][8][9] and the review of Vurgaftman et al recommends using C͑E 0 ͒ = + 670 meV.…”