Specifically for the optoelectronics
field, it is always a provocative
task for researchers to fabricate a device that can endure diverse
extreme conditions without losing its fundamental properties. Metal
dichalcogenides have stimulated influential research inquisitively
due to the noteworthy optoelectronic properties and device applications
designed for extreme environmental circumstances. Among metal dichalcogenides,
SnSe2 is an exceptionally studied material due to its extraordinary
photosensing ability. In the present article, exploration of the photoresponse
nature of the vapor-phase-grown SnSe2 single crystal is
elaborated comprehensively. The stoichiometric purity of constituents
was verified by the energy-dispersive X-ray analysis (EDAX). The X-ray
diffraction (XRD) pattern unveiled a highly crystalline hexagonal
lattice structure. A surface morphological analysis is carried out
by optical and scanning electron microscopy (SEM) experiments in which
layered growth mechanism and randomly oriented hexagonal sheets are
observed. Additionally, crystalline nanoflakes are observed in high-resolution
transmission electron microscopy (HR-TEM), wherein the interlayer
lattice spacing is found to be 0.65 nm. The first-order temperature
coefficient and anharmonicity constant are determined from the dependence
of Raman mode on low temperatures. Afterward, the photodetection properties
are inspected for distinct conditions such as perpendicular and parallel
to the c-axis, varied intensity of mono- and polychromatic
illumination with different externally applied biases to the detector,
and cryogenic temperatures down to 10 K. To the best of our knowledge,
sensor properties at 10 K are being reported for the first time in
this article. As per investigation, the remarkable properties of SnSe2 single crystals such as reproducibility, steadiness, self-biased
nature, ability to withstand and responding to the illumination even
at a low temperature of 10 K make them a strong candidate for future
optoelectronic switching applications for cryotronics.
Transition metal dichalcogenides (TMDCs) have shown tremendous potential in high-performance cryotronics applications. In particular, in the semiconductor industry, TMDC-based Schottky barrier devices are in demand due to their low turn-on voltage that also remains effectual at low-temperature conditions. However, cryogenic temperature dependent electrical characteristics of Schottky device have only rarely been explored previously but with limited discussion. In the present article, the electrical characteristics of In/p-WS 2 Schottky devices are studied comprehensively for their cryotronics application. A WS 2 single crystal was grown by the direct vapor transport (DVT) technique. It is well characterized by EDAX, PXRD, and SEM in which the highly pure and crystalline nature of WS 2 crystal is observed with hexagonal layered growth. A Hall effect measurement confirmed the p-type nature. Thermally evaporated indium thin films onto WS 2 crystal showed a rectifying nature, having good Schottky characteristics. For the analytical study of Schottky device parameters, current−voltage (I−V), capacitance−voltage (C−V) and conductance−voltage (G−V) measurements have been carried out in the temperature range of 300−60 K with a 40 K step. Herein, as an outcome of the present study, remarkable Schottky characteristics are demonstrated with an ideality factor of 1.59, and an efficient device performance at 60 K makes In/p-WS 2 suitable for future cryotronics applications.
Metrics & MoreArticle RecommendationsI n the original version of this article, the unit cell volume of SnSe 2 is given as 87.64 Å 3 in the ninth line of section 3 named "3. RESULTS AND DISCUSSION". We have found that the correct value of the unit cell volume is 75.89 Å 3 instead of 87.64 Å 3 . This change does not affect the scientific conclusions of the published article and is approved by all the authors.
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