Superior Cryotronics Performance of the In/p-WS₂ Schottky Interface

Abstract

Transition metal dichalcogenides (TMDCs) have shown tremendous potential in high-performance cryotronics applications. In particular, in the semiconductor industry, TMDC-based Schottky barrier devices are in demand due to their low turn-on voltage that also remains effectual at low-temperature conditions. However, cryogenic temperature dependent electrical characteristics of Schottky device have only rarely been explored previously but with limited discussion. In the present article, the electrical characteristics of In/p-WS 2 Schottky devices are studied comprehensively for their cryotronics application. A WS 2 single crystal was grown by the direct vapor transport (DVT) technique. It is well characterized by EDAX, PXRD, and SEM in which the highly pure and crystalline nature of WS 2 crystal is observed with hexagonal layered growth. A Hall effect measurement confirmed the p-type nature. Thermally evaporated indium thin films onto WS 2 crystal showed a rectifying nature, having good Schottky characteristics. For the analytical study of Schottky device parameters, current−voltage (I−V), capacitance−voltage (C−V) and conductance−voltage (G−V) measurements have been carried out in the temperature range of 300−60 K with a 40 K step. Herein, as an outcome of the present study, remarkable Schottky characteristics are demonstrated with an ideality factor of 1.59, and an efficient device performance at 60 K makes In/p-WS 2 suitable for future cryotronics applications.

Investigating the Electrical Transport and Photoresponse Properties of WSe2 and a Thermally Engineered SrTiO3-Based Heterojunction

“…The standard TE model is I = I 0 .25em exp true( nobreak0em.25em⁡ q V n k T true) [ 1 − exp true( − q V n k T true) ] where I 0 is the reverse saturation current described by the relationship I 0 = A A * T 2 .25em exp ( − q φ b k T ) where A is the effective diode area, A * is the effective Richardson constant, k is the Boltzmann constant, T is the absolute temperature, and φ b is the barrier height of the heterostructure. , Here, the value of the Richardson constant is taken to be 156 A cm –2 K –2 for STO. , The value of the ideality factor is found using the slope of the logarithmic plot of ln I vs V . n = q k T ( d V d ln I ) …”

“…The standard TE model is where I 0 is the reverse saturation current described by the relationship where A is the effective diode area, A * is the effective Richardson constant, k is the Boltzmann constant, T is the absolute temperature, and φ b is the barrier height of the heterostructure. , Here, the value of the Richardson constant is taken to be 156 A cm –2 K –2 for STO. , The value of the ideality factor is found using the slope of the logarithmic plot of ln I vs V . …”

Unlocking the resistive switching in Acacia Senegal-based electrolyte for neuromorphic computation

“…Extensive work is emerging in the development of these devices in two-fold pathways; studying the effect of electrodes [17][18][19] in the conventional MIM structure and its effect on the device's switching and synaptic behaviour, and observing the resistive switching behaviour with different active materials (I) and its implications on synaptic behaviour of these devices. [20][21][22][23][24] However, the ions migrating through the active medium have much smaller mobility compared to the ions forming the synapse between any two neurons in the biological neural network. In an attempt to overcome this issue, the use of ionic liquids as an active material has recently emerged.…”

Cryotronic Low‐Powered Strained Polymorphic Photodetector Functionalized by Palladium Incorporated Tin Diselenide

“…[ 7 ] In this context, solid state devices functionalized by metal dichalcogenides are highly beneficial for optoelectronic applications at the cryogenic level but is rarely reported with very limited exploration. [ 7,35 ] Specifically for metal dichalcogenides, cryogenic temperature dependent photodetection properties of pure and doped materials are rarely reported in which a substantial photo response of a pure SnSe 2 single crystal at 10 K and 50 mV bias has been achieved and reported by us for the first time. [ 7 ] As an extension of our previously reported work, we successfully achieved very effectual photo response at a very low bias of 10 µV applied to the photodetector based on Pd 0.4 Sn 0.6 Se 2 single crystal at 10 K in the present investigation.…”