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Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing to the lack of out-of-plane bonds in the sp 2 lattice of graphene, nucleation of ALD layers is typically promoted by functionalization treatments or pre-deposition of a seed-layer, which, in turn, can adversely affect graphene electrical 2 properties. Hence, ALD of dielectrics on graphene without pre-functionalization and seedlayers would be highly desirable. In this work, uniform Al2O3 films were obtained by seedlayer-free thermal ALD at 250 °C on highly homogeneous monolayer (1L) epitaxial graphene (EG) (>98% 1L coverage) grown under optimized high temperature conditions on on-axis 4H-SiC(0001). The enhanced nucleation behavior on 1L graphene is not related to the SiC substrate, but it is peculiar of the EG/SiC interface. Ab-initio DFT calculations showed an enhanced adsorption energy for water molecules on highly n-type doped 1L graphene, indicating the high doping of EG induced by the underlying buffer layer as the origin of the excellent Al2O3 nucleation. Nanoscale current mapping by conductive atomic force microscopy showed excellent insulating properties of the Al2O3 thin films on 1L EG, with a breakdown field >8 MV/cm. These results will have important impact in graphene device technology.

Graphite has been widely used by humans for a large part of their history. Nevertheless, it has only recently been possible to isolate its basic unit: carbon atoms arranged in a honeycomb structure on a single plane, namely graphene. Since its discovery, many techniques have been developed and improved to properly synthesize graphene and its derivatives which are part of the novel class of two-dimensional materials. These advanced materials have imposed themselves in nanotechnology thanks to some outstanding physical properties due to their reduced dimensions. In the case of graphene, its reduced dimension gives rise to a high electrical mobility, a large thermal conductivity, a high mechanical resistance, and a large optical transparency. Therefore, such aspect is of great scientific interest for both basic and applied research, ranging from theoretical physics to surface chemistry and applied solid state physics. The connection between all these fields is guaranteed by spectroscopy and especially by Raman spectroscopy which provides a lot of information about structural and electronic features of graphene. In this review, the authors present a systematized collection of the most important physical insights on the fundamental electronic and vibrational properties of graphene, their connection with basic optical and Raman spectroscopy, and a brief overview of main synthesis methods.

Low‐dimensional carbon materials occupy a relevant role in the field of nanotechnology. Herein, the authors report a study conducted by atomic force microscopy and Raman spectroscopy on the deposition of carbon dots onto graphene surfaces. The study aims at understanding if and how the morphology and the microstructure of chemical vapor deposited graphene on Si/SiO2 may change due to the interaction with the carbon dots. Potential alteration in the graphene's electrical properties might be detrimental for optoelectronic applications. The deposition of carbon dots dispersed in water and ethanol solvents are explored to investigate the effect of solvents with different fluidic properties. The obtained results indicate that the carbon dots do not alter the quality of graphene.

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Graphene (Gr)—a single layer of two-dimensional sp2 carbon atoms—and Carbon Dots (CDs)—a novel class of carbon nanoparticles—are two outstanding nanomaterials, renowned for their peculiar properties: Gr for its excellent charge-transport, and CDs for their impressive emission properties. Such features, coupled with a strong sensitivity to the environment, originate the interest in bringing together these two nanomaterials in order to combine their complementary properties. In this work, the investigation of a solid-phase composite of CDs deposited on Gr is reported. The CD emission efficiency is reduced by the contact of Gr. At the same time, the Raman analysis of Gr demonstrates the increase of Fermi energy when it is in contact with CDs under certain conditions. The interaction between CDs and Gr is modeled in terms of an electron-transfer from photoexcited CDs to Gr, wherein an electron is first transferred from the carbon core to the surface states of CDs, and from there to Gr. There, the accumulated electrons determine a dynamical n-doping effect modulated by photoexcitation. The CD–graphene interaction unveiled herein is a step forward in the understanding of the mutual influence between carbon-based nanomaterials, with potential prospects in light conversion applications.

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An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.