Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Armano, Angelo; Buscarino, Gianpiero; Cannas, Marco; Gelardi, F. M.; Giannazzo, Filippo; Schilirò, Emanuela; Nigro, Raffaella Lo; Agnello, S.

doi:10.1016/j.carbon.2019.04.065

Cited by 13 publications

(5 citation statements)

References 61 publications

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“…The two spectra, normalized to the G peak intensity, exhibit a very weak defects-related D peak, indicating a high structural quality of Gr. While Gr onto Al 2 O 3 shows a 2D over G peak intensity ratio I 2D / I G ≈ 1.3, consistent with the typically reported values for monolayer Gr with low unintentional p-type doping, a significantly lower ratio, I 2D / I G ≈ 1, was found for monolayer Gr residing on AlGaN. Such a difference can be ascribed to a higher doping of Gr in contact with this nitride semiconductor substrate.…”

Section: Resultssupporting

confidence: 88%

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Giannazzo

Greco

Schilirò

et al. 2019

ACS Appl. Electron. Mater.

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The electronic properties of the graphene (Gr) Schottky junction with an Al0.22Ga0.78N/GaN heterostructure on silicon have been investigated, both by experiment and with use of ab initio DFT calculations. A peculiarly high n-type doping (1.1 × 1013 cm–2), observed for Gr in contact with AlGaN, was explained by the combined effect of Fermi level pinning by AlGaN surface states and charge transfer. Spatially uniform current injection across the Gr/AlGaN/GaN heterojunction was revealed by nanoscale resolution conductive atomic force microscopy (CAFM) analyses. Furthermore, a Gr/AlGaN/GaN Schottky diode with excellent rectifying behavior has been demonstrated and used as the key building block for a hot electron transistor (HET) with a 10 nm Al2O3 base-collector barrier. Thanks to the highly efficient hot electron injection from the AlGaN/GaN emitter, this transistor exhibits high on-state current density (J C,ON ≈ 1 A/cm2), high on-state over off-state current density ratio (J C,ON/J C,OFF ≈ 106), and a common-base current gain α ≈ 0.15, solely limited by the high Al2O3 base–collector barrier. The excellent performances of the Gr/AlGaN/GaN Schottky junction represent an important step toward the development of a HET technology compatible with the state-of-the-art GaN high electron mobility transistors.

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Section: Resultssupporting

confidence: 88%

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Giannazzo

Greco

Schilirò

et al. 2019

ACS Appl. Electron. Mater.

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“…Nevertheless, according to the recent literature, the different contributionσ of the various effects can be partially disentangled by using a method developed by the author of Refs. [108][109][110][111][112]. Herein, the shifts of G and 2D band are analyzed by using a G-2D map obtained by plotting the peak position of 2D band vs G band (Figure 27a) calibrated according to the used laser wavelength.…”

Section: Dopingmentioning

confidence: 99%

Two-Dimensional Carbon: A Review of Synthesis Methods, and Electronic, Optical, and Vibrational Properties of Single-Layer Graphene

Armano

Agnello

2019

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Graphite has been widely used by humans for a large part of their history. Nevertheless, it has only recently been possible to isolate its basic unit: carbon atoms arranged in a honeycomb structure on a single plane, namely graphene. Since its discovery, many techniques have been developed and improved to properly synthesize graphene and its derivatives which are part of the novel class of two-dimensional materials. These advanced materials have imposed themselves in nanotechnology thanks to some outstanding physical properties due to their reduced dimensions. In the case of graphene, its reduced dimension gives rise to a high electrical mobility, a large thermal conductivity, a high mechanical resistance, and a large optical transparency. Therefore, such aspect is of great scientific interest for both basic and applied research, ranging from theoretical physics to surface chemistry and applied solid state physics. The connection between all these fields is guaranteed by spectroscopy and especially by Raman spectroscopy which provides a lot of information about structural and electronic features of graphene. In this review, the authors present a systematized collection of the most important physical insights on the fundamental electronic and vibrational properties of graphene, their connection with basic optical and Raman spectroscopy, and a brief overview of main synthesis methods.

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“…It is worth noting that to prepare the InP 3 -based gas sensor, the interaction between the InP 3 nanomaterial and the substrate is very significant. 34 The main impact parameters include the texture of the substrate, deposition temperature, and exposure time and humidity in the air, 35 which are significant to ensure that the sensing materials can be doped on the substrates with the best-sensing performance using a proper thermal treatment technique. We are hopeful that such a highlight is beneficial to help the experimental researchers to prepare an InP 3 -based gas sensor with high gas sensitivity.…”

Section: Resultsmentioning

confidence: 99%

InP₃ Monolayer as a Promising 2D Sensing Material in SF₆ Insulation Devices

Qin

Luo

et al. 2021

ACS Omega

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In this letter, we perform a first-principles study on the adsorption performance of the InP3 monolayer upon three SF6 decomposed species, including SO2, SOF2, and SO2F2, to investigate its potential as a resistance-type, optical or field-effect transistor gas sensor. Results indicate that the InP3 monolayer exhibits strong chemisorption upon SO2 but weak physisorption upon SO2F2. The most admirable adsorption behavior is upon SOF2, which provides a favorable sensing response (−19.4%) and recovery property (10.4 s) at room temperature as a resistance-type gas sensor. A high response of 180.7% upon SO2 and a poor one of −1.9% upon SO2F2 are also identified, which reveals the feasibility of the InP3 monolayer as a resistance-type sensor for SO2 detection with recycle use via a heating technique to clean the surface. Moreover, the InP3 monolayer is a promising optical sensor for SO2 detection due to the obvious changes in adsorption peaks within the range of ultraviolet and is a desirable field-effect transistor sensor for selective and sensitive detection of SO2 and SOF2 given the evident changes of Q T and E g under the applied electric field.

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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Cited by 13 publications

References 61 publications

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Two-Dimensional Carbon: A Review of Synthesis Methods, and Electronic, Optical, and Vibrational Properties of Single-Layer Graphene

InP₃ Monolayer as a Promising 2D Sensing Material in SF₆ Insulation Devices

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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Cited by 13 publications

References 61 publications

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Two-Dimensional Carbon: A Review of Synthesis Methods, and Electronic, Optical, and Vibrational Properties of Single-Layer Graphene

InP3 Monolayer as a Promising 2D Sensing Material in SF6 Insulation Devices

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InP₃ Monolayer as a Promising 2D Sensing Material in SF₆ Insulation Devices