A common phenomenon of organic solar cells (OSCs) incorporating metal‐oxide electron extraction layers is the requirement to expose the devices to UV light in order to improve device characteristics – known as the so‐called “light‐soaking” issue. This behaviour appears to be of general validity for various metal‐oxide layers, various organic donor/acceptor systems, and regardless if single junction devices or multi stacked cells are considered. The requirement of UV exposure of OSCs may impose severe problems if substrates with limited UV transmission, UV blocking filters or UV to VIS down‐conversion concepts are applied. In this paper, we will demonstrate that this issue can be overcome by the use of Al doped ZnO (AZO) as electron extraction interlayer. In contrast to devices based on TiOx and ZnO, the AZO devices show well‐behaved solar cell characteristics with a high fill factor (FF) and power conversion efficiency (PCE) even without the UV spectral components of the AM1.5 solar spectrum. As opposed to previous claims, our results indicate that the origin of s‐shaped characteristics of the OSCs is the metal‐oxide/organic interface. The electronic structures of the TiOx/fullerene and AZO/fullerene interfaces are studied by photoelectron spectroscopy, revealing an electron extraction barrier for the TiOx/fullerene case and facilitated electron extraction for AZO/fullerene. These results are of general relevance for organic solar cells based on various donor acceptor active systems.

Semitransparent perovskite solar cells (PSCs) are of interest for application in tandem solar cells and building-integrated photovoltaics. Unfortunately, several perovskites decompose when exposed to moisture or elevated temperatures. Concomitantly, metal electrodes can be degraded by the corrosive decomposition products of the perovskite. This is even the more problematic for semitransparent PSCs, in which the semitransparent top electrode is based on ultrathin metal films. Here, we demonstrate outstandingly robust PSCs with semitransparent top electrodes, where an ultrathin Ag layer is sandwiched between SnO x grown by low-temperature atomic layer deposition. The SnO x forms an electrically conductive permeation barrier, which protects both the perovskite and the ultrathin silver electrode against the detrimental impact of moisture. At the same time, the SnO x cladding layer underneath the ultra-thin Ag layer shields the metal against corrosive halide compounds leaking out of the perovskite. Our semitransparent PSCs show an efficiency higher than 11% along with about 70% average transmittance in the near-infrared region (λ > 800 nm) and an average transmittance of 29% for λ = 400-900 nm. The devices reveal an astonishing stability over more than 4500 hours regardless if they are exposed to ambient atmosphere or to elevated temperatures.

A hybrid approach for the realization of In-free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal-oxide is demonstrated. As metal-oxide room-temperature-processed sol-gel SnO x or Al:ZnO prepared by low-temperature (100 ° C) atomic layer deposition is used, respectively. In this concept, the metal-oxide is intended to fuse the wires together and also to "glue" them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq −1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is signifi cantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium-and PEDOT:PSS-free hybrid layers are successfully implemented as transparent top-electrodes in effi cient allsolution-processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.

Transparent and electrically conductive gas diffusion barriers are reported. Tin oxide (SnOx ) thin films grown by atomic layer deposition afford extremely low water vapor transmission rates (WVTR) on the order of 10(-6) g (m(2) day)(-1) , six orders of magnitude better than that established with ITO layers. The electrical conductivity of SnOx remains high under damp heat conditions (85 °C/85% relative humidity (RH)), while that of ZnO quickly degrades by more than five orders of magnitude.