The area of thin-film photovoltaics has been overwhelmed by organometal halide perovskites. Unfortunately, serious stability concerns arise with perovskite solar cells. For example, methyl-ammonium lead iodide is known to decompose in the presence of water and, more severely, even under inert conditions at elevated temperatures. Here, we demonstrate inverted perovskite solar cells, in which the decomposition of the perovskite is significantly mitigated even at elevated temperatures. Specifically, we introduce a bilayered electron-extraction interlayer consisting of aluminium-doped zinc oxide and tin oxide. We evidence tin oxide grown by atomic layer deposition does form an outstandingly dense gas permeation barrier that effectively hinders the ingress of moisture towards the perovskite and—more importantly—it prevents the egress of decomposition products of the perovskite. Thereby, the overall decomposition of the perovskite is significantly suppressed, leading to an outstanding device stability.

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Perovskites offer exciting opportunities to realize efficient multijunction photovoltaic devices. This requires high-V OC and often Br-rich perovskites, which currently suffer from halide segregation. Here, we study triple-cation perovskite cells over a wide bandgap range (∼1.5–1.9 eV). While all wide-gap cells (≥1.69 eV) experience rapid phase segregation under illumination, the electroluminescence spectra are less affected by this process. The measurements reveal a low radiative efficiency of the mixed halide phase which explains the V OC losses with increasing Br content. Photoluminescence measurements on nonsegregated partial cell stacks demonstrate that both transport layers (PTAA and C60) induce significant nonradiative interfacial recombination, especially in Br-rich (>30%) samples. Therefore, the presence of the segregated iodide-rich domains is not directly responsible for the V OC losses. Moreover, LiF can only improve the V OC of cells that are primarily limited by the n-interface (≤1.75 eV), resulting in 20% efficient 1.7 eV bandgap cells. However, a simultaneous optimization of the p-interface is necessary to further advance larger bandgap (≥1.75 eV) pin-type cells.