High-mobility semiconducting polymers offer the opportunity to develop flexible and large-area electronics for several applications, including wearable, portable and distributed sensors, monitoring and actuating devices. An enabler of this technology is a scalable printing process achieving uniform electrical performances over large area. As opposed to the deposition of highly crystalline films, orientational alignment of polymer chains, albeit commonly achieved by non-scalable/slow bulk alignment schemes, is a more robust approach towards large-area electronics. By combining pre-aggregating solvents for formulating the semiconductor and by adopting a room temperature wired bar-coating technique, here we demonstrate the fast deposition of submonolayers and nanostructured films of a model electron-transporting polymer. Our approach enables directional self-assembling of polymer chains exhibiting large transport anisotropy and a mobility up to 6.4 cm2 V−1 s−1, allowing very simple device architectures to operate at 3.3 MHz. Thus, the proposed deposition strategy is exceptionally promising for mass manufacturing of high-performance polymer circuits.

-Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.

A new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is reported. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm V s for common polymer and other semiconductor families at V ≤ 2 V owing to high areal capacitance (>4 µF cm ) from combined polarization of CF interface dipoles and electrical-double-layer formation.

Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of any circuit, are still showing limited speed of operation, thus limiting their real applicability. So far, attempts with organic FETs to achieve the tens of MHz regime, a threshold for many applications comprising the driving of high resolution displays, have relied on the adoption of sophisticated lithographic techniques and/or complex architectures, undermining the whole concept. In this work we demonstrate polymer FETs which can operate up to 20 MHz and are fabricated by means only of scalable printing techniques and direct-writing methods with a completely mask-less procedure. This is achieved by combining a fs-laser process for the sintering of high resolution metal electrodes, thus easily achieving micron-scale channels with reduced parasitism down to 0.19 pF mm−1, and a large area coating technique of a high mobility polymer semiconductor, according to a simple and scalable process flow.

Current voltage measurement of three different PEDOT:PSS printed lines Figure S1. Current-voltage characteristics of all three different PEDOT:PSS printed lines. Inset (a) optical micrograph and (b) thickness profiles of the printed lines.

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy, and distributed intelligent objects. The possibility of exploiting solution‐based and direct‐writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio‐compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low‐frequency operation, owing to the limited charge mobility of the materials and to the low spatial resolution achievable with conventional printing techniques. Here, it is shown that solution‐processed and direct‐written organic field‐effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. Such range was believed to be only accessible with more performing classes of semiconductor materials and/or more expensive fabrication schemes. The present achievement opens a route for cost‐ and energy‐efficient manufacturability of flexible and conformable electronics with wireless‐communication capabilities.

A platform is described for the first time for the facile synthesis of oligo‐ and polythiophene‐S‐oxides and the corresponding ‐S,S‐dioxides in short times, mild conditions, high yields. Employing ultrasound assistance, brominated thiophenes are selectively mono‐ or dioxygenated at room temperature. These building blocks are then combined with metalated thiophenes via microwave‐assisted cross‐coupling reactions through a “Lego‐like” strategy to afford unprecedented oligo/polythiophene‐S‐oxides and mixed ‐S‐oxides/‐S,S‐dioxides. It is demonstrated that depending on the number, type, and sequence alternation of nonoxygenated, monooxygenated, and dioxygenated thiophene units a very wide property–function tuning can be achieved spanning from frontier orbital energies and energy gaps, to charge transport characteristics and supramolecular H‐bonding interactions with specific proteins inside live cells.

Organic printed electronics are suitable for the development of wearable, lightweight, distributed applications in combination with cost‐effective production processes. Nonetheless, some necessary features for several envisioned disruptive mass‐produced products are still lacking: among these radio‐frequency (RF) communication capability, which requires high operational speed combined with low supply voltage in electronic devices processed on cheap plastic foils. Here, it is demonstrated that high‐frequency, low‐voltage, polymer field‐effect transistors can be fabricated on plastic with the sole use of a combination of scalable printing and digital laser‐based techniques. These devices reach an operational frequency in excess of 1 MHz at the challengingly low bias voltage of 2 V, and exceed 14 MHz operation at 7 V. In addition, when integrated into a rectifying circuit, they can provide a DC voltage at an input frequency of 13.56 MHz, opening the way for the implementation of RF devices and tags with cost‐effective production processes.