Abstract-Fiber Bragg gratings (FBGs) technology has demonstrated its suitability for many applications in recent fiber technologies. Sensing application is one of the main applications of FBGs. In this work, we present a comprehensive investigation for using apodized FBGs in sensing applications. Different evaluation parameters such as, reflectivity, sidelobes, and fullwidth-half-maximum (FWHM) are tested in order to determine the most proper apodization profile for sensors. According to our study, the Blackman apodization gives the best profile that can be used in sensing applications. The reflectivity of Blackman apodization is nearly unity with minimum sidelobes level, -60.3 dB, and narrow FWHM. The length of Blackman apodized FBG is 0.33 cm and Δn = 14.4 x 10 -4 and maximum reflectivity is 99.44%.
GaMnN films grown by metal-organic chemical vapor deposition were studied by photoluminescence ͑PL͒ spectroscopy and hysteresis measurements. Depending on the growth conditions of these GaMnN films, hysteresis measurements along the easy axis of magnetization show a transformation from magnetic to nonmagnetic behavior. The PL spectra of both magnetic and nonmagnetic GaMnN films exhibited GaN band edge and deep-level impurity transitions at 3.4 and 1.3 eV, respectively. The PL emission intensity of the 1.3 eV emission peak is stronger considerably for magnetic GaMnN films and is believed to be due to the Mn 3+ intraband transition.
Dilute magnetic semiconductor films (GaMnN) are highly resistive, making transport measurements difficult to achieve. However, when GaMnN films are sandwiched between p-type doped (AlGaN∕GaN) strained-layer superlattices, holes from the superlattice interact with the Mn3+∕2+ ions and transport measurements were realized. The authors have found also that the ferromagnetic properties of GaMnN critically depend on the level of p-type doping in the superlattice. They report anomalous Hall effect measurements in this (AlGaN∕GaN):Mg∕(GaMnN) multilayered structure. The current results also demonstrate the role of carriers, especially holes, in mediating the ferromagnetic properties of GaMnN dilute magnetic semiconductor films.
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