Magnetic and magnetotransport properties of (AlGaN∕GaN):Mg∕(GaMnN) heterostructures at room temperature

Mahros, Amr M.; Luen, M. Oliver; Emara, A.; Bedair, S. M.; Berkman, E. A.; El‐Masry, N. A.; Zavada, J. M.

doi:10.1063/1.2749717

Cited by 15 publications

(7 citation statements)

References 14 publications

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“…8 The crystal field of the lattice splits the fivefold degenerate d shell of Mn into doublet e and a pseudotriplet t 2 states. [13][14][15] Doping with the shallow Mg acceptor has enhanced carrier-mediated ferromagnetism of GaMnN films. Optical absorption and photoconductivity measurements on GaMnN show deep optical absorption bands at 1.5 and 2.0 eV.…”

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confidence: 99%

Correlation between photoluminescence and magnetic properties of GaMnN films

Nepal

Mahros

Bedair

et al. 2007

Applied Physics Letters

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GaMnN films grown by metal-organic chemical vapor deposition were studied by photoluminescence ͑PL͒ spectroscopy and hysteresis measurements. Depending on the growth conditions of these GaMnN films, hysteresis measurements along the easy axis of magnetization show a transformation from magnetic to nonmagnetic behavior. The PL spectra of both magnetic and nonmagnetic GaMnN films exhibited GaN band edge and deep-level impurity transitions at 3.4 and 1.3 eV, respectively. The PL emission intensity of the 1.3 eV emission peak is stronger considerably for magnetic GaMnN films and is believed to be due to the Mn 3+ intraband transition.

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confidence: 99%

Correlation between photoluminescence and magnetic properties of GaMnN films

Nepal

Mahros

Bedair

et al. 2007

Applied Physics Letters

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“…Our recent results showed that p-type ͑AlGaN/GaN͒ strained-layer superlattices ͑SLSs͒ forming p-SLS/GaMnN/p-SLS heterostructure overcome the problem of the highly resistive GaMnN films. 11 A correlation between the FM of the film and the availability of holes in the p-type SLSs has been observed. Our current approach is based on separating the DMS mediating hole carriers from the GaMnN films by growing GaMnN on a p-GaN layer.…”

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confidence: 87%

“…Our current approach is based on separating the DMS mediating hole carriers from the GaMnN films by growing GaMnN on a p-GaN layer. 10,11 The source of mediating carriers is the p-GaN and the hole concentration can be controlled by applying an electric field.…”

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confidence: 99%

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

Nepal¹,

Luen²,

Zavada³

et al. 2009

Applied Physics Letters

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We report on the electrical field control of ferromagnetism ͑FM͒ at room temperature in III-N dilute magnetic semiconductor ͑DMS͒ films. A GaMnN layer was grown on top of an n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization ͑M s ͒ was observed. This FM in GaMnN can be controlled by depletion of the holes in the GaMnN/p-GaN/n-GaN multilayer structures. We have demonstrated the dependence of the FM on the thickness of the p-GaN in this heterostructure and on the applied bias to the GaN p-n junction. The M s was measured by an alternating gradient magnetometer ͑AGM͒ and a strong correlation between the hole concentration near the GaMnN/p-GaN interface and the magnetic properties of the DMS was observed. At room temperature an anomalous Hall effect was measured for zero bias and an ordinary Hall effect for reverse bias in a fully depleted p-GaN layer. This is in close agreement with the AGM measurement results.

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“…This may be achieved by substitutional doping of double valent Mg Ga in the GaN spacer, as the carrier-mediated antiferromagnetic IEC in the DMS superlattices and multilayers discussed earlier by Jungwirth et al 9 For this reason, we calculated the IEC between two (Ga, Cr)N layers separated by the Mgdoped GaN spacer, where the Mg doping in the spacer is known to increase the hole concentrations directly in the GaN layers. 28 Fig . 2 presents the calculated IECs for the (Ga, Cr)N multilayers with one Mg atom doped into the middle of the GaN spacer layers (Fig.…”

Section: B Effect Of Mg Dopingmentioning

confidence: 99%

First-principles studies of interlayer exchange coupling in (Ga, Cr)N-based diluted magnetic semiconductor multilayers

Luo

Sun

Tang

2013

Journal of Applied Physics

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Interlayer exchange coupling (IEC) in a series model diluted magnetic semiconductor multilayer consisting of two magnetic (Ga, Cr)N layers separated by non-doped or Mg-doped GaN non-magnetic spacers has been studied by first-principles calculations. The effects of the spacer thickness and hole doping to the IEC were studied systematically. For the GaN spacers without Mg doping, the IEC between two magnetic (Ga, Cr)N layers is always ferromagnetic and is clarified as an intrinsic character of the Ruderman-Kittle-Kasuya-Yoshida interaction based on a two-band model for a gapped system. For the Mg-doped GaN spacers, the IEC is antiferromagnetic, and the antiferromagnetic IEC is stable with increasing the spacer thickness.

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Magnetic and magnetotransport properties of (AlGaN∕GaN):Mg∕(GaMnN) heterostructures at room temperature

Cited by 15 publications

References 14 publications

Correlation between photoluminescence and magnetic properties of GaMnN films

Correlation between photoluminescence and magnetic properties of GaMnN films

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

First-principles studies of interlayer exchange coupling in (Ga, Cr)N-based diluted magnetic semiconductor multilayers

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