2-D
Ti3C2TX MXene nanosheets are
obtained by etching Ti3SiC2 MAX phase that is
synthesized by heating the elemental Ti, Si, and C mixture at high
temperature. The electron emission behavior of both Ti3C2TX MXene and Ti3SiC2 MAX phase is studied. MXene exhibits excellent field emission characteristics
with a turn-on field of 4.7 V μm–1, and that
for the Ti3SiC2 MAX phase is 6.5 V μm–1. The turn-on electric field corresponding to an emission
current density of 10 μA cm–2 is 5.0 V μm–1 for Ti3C2TX MXene
and 7.5 V μm–1 for the Ti3SiC2 MAX phase. The calculated enhancement factor of MXene nanosheets
is ∼4280, which is one of the highest reported enhancement
factors to date. In order to get theoretical insight into the field
emission properties for Ti3C2 and OH-terminated
Ti3C2 MXene in comparison to the Ti3SiC2 MAX phase, we have presented the structure and electronic
properties from state of the art density functional theory (DFT) simulations.
The interaction of – OH with Ti3C2 involves
charge transfer from the “Ti” 3d orbital to −OH.
The computed work function follows the trend Ti3SiC2 > Ti3C2 > Ti3C2/OH, which supports the maximum field emission in −OH-terminated
Ti3C2 MXene and the minimum field emission in
the Ti3SiC2 MAX phase.
Porous aligned CdO nanosheets were grown by simple and cost effective method of thermal annealing. These nanosheets were decorated with Au nanoparticles, and the field emission properties of the Au-decorated aligned CdO nanosheets were enhanced.
In the present study, we report a simple method to prepare indium(III)
selenide (In2Se3) nanocubes synthesized by laser
ablation in aqueous medium. The morphological characterization carried
out using field-emission scanning electron microscopy (FESEM) and
transmission electron microscopy (TEM) reveal that the nanocubes have
an average size of 70 nm. X-ray diffraction and Raman analysis clearly
imply formation of pure and crystalline In2Se3 phases only, without any impurity phases, despite laser ablation
being carried out in aqueous medium. In addition, the field emission
and charge carrier behavior of In2Se3 nanocubes
have been investigated. The laser-ablated sample shows a cubical morphology
having a 70 nm average particle size. The ultrafast transient absorption
spectroscopy (UTAS) suggests the slow decay behavior of charge carriers
and an increase in the trap state levels after laser ablation, in
contrast to the untreated bulk sample. Surprisingly, the In2Se3 nanocubes on a carbon tape emitter exhibits superior
FE properties characterized by lower values of turn-on and threshold
fields as compared to In2Se3 nanowire emitters
and the ability to deliver very large current density ∼2656
μA/cm2 by applying a field of 9.7 V/μm. Furthermore,
the In2Se3 nanocube emitter showed very good
emission stability at the pre-set value 10 μA over a duration
of 5 h. The superior FE characteristics of the In2Se3 nanocube emitter is attributed to unique morphology characterized
by nanometric cubes and improved electrical properties, as revealed
by UTAS analysis. The observed results imply the potential of In2Se3 nanocube emitters for practical applications
in vacuum nano-microelectronic devices.
Aligned 2D CuSCN nanosheets were grown by a simple, low cost and room temperature SILAR technique. The field emission properties of aligned 2D CuSCN nanosheets were studied in detail.
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