2016
DOI: 10.1039/c5ra28000a
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Surface modification of aligned CdO nanosheets and their enhanced field emission properties

Abstract: Porous aligned CdO nanosheets were grown by simple and cost effective method of thermal annealing. These nanosheets were decorated with Au nanoparticles, and the field emission properties of the Au-decorated aligned CdO nanosheets were enhanced.

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Cited by 22 publications
(5 citation statements)
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“…The intensity ratio of the (200) and (111) diffraction peaks of the Au NPs was 1:3, suggesting that the (111) plane was the predominant orientation that was also confirmed by the HR-TEM image (Figure A inset). The crystalline nature of the Au NPs with a fringe spacing of 0.244 nm was very close to the (111) plane . With decreased concentrations of ACP (0.01 mU mL –1 ), the size of the formed Au NPs increased because of aggregation.…”
Section: Resultsmentioning
confidence: 86%
See 1 more Smart Citation
“…The intensity ratio of the (200) and (111) diffraction peaks of the Au NPs was 1:3, suggesting that the (111) plane was the predominant orientation that was also confirmed by the HR-TEM image (Figure A inset). The crystalline nature of the Au NPs with a fringe spacing of 0.244 nm was very close to the (111) plane . With decreased concentrations of ACP (0.01 mU mL –1 ), the size of the formed Au NPs increased because of aggregation.…”
Section: Resultsmentioning
confidence: 86%
“…The crystalline nature of the Au NPs with a fringe spacing of 0.244 nm was very close to the (111) plane. 56 With decreased concentrations of ACP (0.01 mU mL −1 ), the size of the formed Au NPs increased because of aggregation. As seen from the TEM image (Figure 1C), the NP distribution was not uniform.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…As for the CdO/p-Si contact, the silicon and CdO electron affinities are 4.05 eV and 3.45 eV, respectively. Therefore, the Schottky barrier occurs at the CdO/p-Si junction (Bagal et al, 2016;Soylu et al, 2012). The values shown in Table 1 shows the correlation between the barrier height and the ideality factor.…”
Section: Resultsmentioning
confidence: 96%
“…The features of the CdO substrates and the wide range of applications of InSe motivated us to bring these two materials together to form a heterojunction device. As the work function (qf) of CdO being 3.45 eV 6 is less than the work function of Au (5.34 eV), the Au/p-CdO form an ohmic interface. Similarly the ohmic contact to n-InSe layer is achieved by using ytterbium ( ) pads.…”
Section: Introductionmentioning
confidence: 99%
“…As thin film transistors InSe processes high gain and short response time which make it attractive for the fabrication of photodetectors and micro-light emitting diode displays 5 . In 2 Se 3 is also used in the fabrication of nonvolatile memory devices 6 . α-In 2 Se 3 /WSe 2 vertical heterojunction devices are mentioned exhibiting switchable diode characteristics and nonvolatile memory phenomenon.…”
Section: Introductionmentioning
confidence: 99%