In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF6/C4F8/O2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 μm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2–6, and for structures from 400 to 4000 μm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5–2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated.

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In this work we studied the influence of technological parameters of plasma chemical etching of silicon on photoresist etching rate, silicon etching rate, etching selectivity of silicon in relation to photoresist, and inclination angle of the profile wall of the etched windows. Based on the obtained results, a common regularity between the inclination angle of the profile wall of the etched windows and the optical emission spectra was revealed. The method of in situ diagnostics was proposed, namely, controlling the inclination angle of the profile wall of the etched windows by the ratio of the emission intensities of the carbon line (517.1 nm) to the fluorine line (685.8 nm and 703.9 nm) designated as parameter X. It was found that the inclination angle of the profile wall of the etched windows takes certain values depending on the value of the X parameter. The ranges of X values, at which the inclination angle of the profile wall of the etched windows is acute, right, and obtuse are estimated. So, at values of X from ≈0.15 to ≈0.35 the acute angle (from 81±0.5° to 89±0.5°) is obtained, at X from ≈0.35 to ≈0.42 the right angle is obtained (90±0.5°), and at X from ≈0.42 to ≈0.75 the values of the inclination angle of the profile wall of the etched windows are in the range from 91±0.5° to 94±0.5°, no matter which technological parameters were set. Experiments were conducted for etching windows with linear dimensions from 0.5x20 mm to 2x20 mm.

In this work, in situ non-perturbing method of optical emission spectroscopy is used to examine the features of the emission spectra of NF3/Xe plasma, which can be used for the process of continuous plasma-chemical etching of lithium niobate. To understand the physicochemical processes occurring in plasma, the influence of high-frequency power, pressure in the chamber, bias voltage and substrate temperature on the emission intensities of the F, N, Xe lines was studied. It was determined that increasing the bias voltage from -300 to -50 V and the temperature from 50 to 300°C doesn’t change the relative intensities of the analysed spectral lines, while increasing the high-frequency power from 500 to 750W and decreasing the pressure from 1.95 to 0.95Pa increase the intensities of the F, N, Xe lines.

This work is devoted to the development of nanosphere lithography (NSL) technology, which is a low-cost and efficient method to form nanostructures for nanoelectronics, as well as optoelectronic, plasmonic and photovoltaic applications. Creating a nanosphere mask by spin-coating is a promising, but not sufficiently studied method, requiring a large experimental base for different sizes of nanospheres. So, in this work, we investigated the influence of the technological parameters of NSL by spin-coating on the substrate coverage area by a monolayer of nanospheres with a diameter of 300 nm. It was found that the coverage area increases with decreasing spin speed and time, isopropyl and propylene glycol content, and with increasing the content of nanospheres in solution. Moreover, the process of controllably reducing the size of nanospheres in inductively coupled oxygen plasma was studied in detail. It was determined that increasing the oxygen flow rate from 9 to 15 sccm does not change the polystyrene etching rate, whereas changing the high-frequency power from 250 to 500 W increases the etching rate and allows us to control the decreasing diameter with high accuracy. Based on the experimental data, the optimal technological parameters of NSL were selected and the nanosphere mask on Si substrate was created with coverage area of 97.8% and process reproducibility of 98.6%. Subsequently reducing the nanosphere diameter lets us obtain nanoneedles of various sizes, which can be used in field emission cathodes. In this work, the reduction of nanosphere size, silicon etching, and removal of polystyrene residues occurred in unified continuous process of plasma etching without sample unloading to atmosphere.

In this work, we studied the influence of technological parameters of plasma chemical etching of silicon on silicon etching rate, photoresist etching rate, etching selectivity of silicon in relation to a photoresist, and sidewall angle of etched structures. It was found that the silicon etching rate increases with raising percentage of SF6 in the gas mixture (25%–50%), pressure (1–2.5 Pa), high-frequency (HF) power (1000–2000 W), and bias voltage module (15–75 V) and decreases with a raising total flow rate of the gas mixture (5–35 SCCM) due to the increasing passivation efficiency of the sample surface. The etching selectivity increases with a raising percentage of SF6 and pressure and decreases with the raising total gas flow rate, HF power, and bias voltage module due to different influences of technological parameters on the photoresist etching rate. In addition, based on the obtained results, a common regularity between the sidewall angle and the optical emission spectra was revealed. The method of in situ diagnostics was proposed, namely, controlling the sidewall angle by a ratio of emission intensities of a carbon line (517.1 nm) to a fluorine line (685.8 and 703.9 nm) designated as parameter X. It was found that the sidewall angle of etched structures takes certain values depending on the value of the X parameter. The ranges of X values at which the sidewall angle is acute, right, and obtuse were estimated. So, at values of X from ≈0.15 to ≈0.35, an acute angle (from 81° ± 0.5° to 89° ± 0.5°) is obtained; at X from ≈0.35 to ≈0.42, a right angle is obtained (90° ± 0.5°); and at X from ≈0.42 to ≈0.75, the values of the sidewall angle are in the range from 91° ± 0.5° to 94° ± 0.5°, no matter which technological parameters were set. Experiments were conducted for etching windows with linear dimensions from 0.5 × 20 to 2 × 20 mm.