2023
DOI: 10.1007/s11090-023-10318-x
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Highly Selective Plasma Etching Technique for Molybdenum

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“…Plasma etching utilizes various gases or gas mixture tailored to the target materials, such as semiconductors [ 4 , 5 ], metals [ 6 , 7 , 8 ], and dielectrics [ 9 , 10 , 11 , 12 ]. For dielectrics, such as SiO 2 and Si 3 N 4 , fluorocarbon-based molecules, such as C 4 F 8 and CHF 3, are widely adopted due to their polymerizing properties, which are particularly advantageous for achieving anisotropic etch profiles.…”
Section: Introductionmentioning
confidence: 99%
“…Plasma etching utilizes various gases or gas mixture tailored to the target materials, such as semiconductors [ 4 , 5 ], metals [ 6 , 7 , 8 ], and dielectrics [ 9 , 10 , 11 , 12 ]. For dielectrics, such as SiO 2 and Si 3 N 4 , fluorocarbon-based molecules, such as C 4 F 8 and CHF 3, are widely adopted due to their polymerizing properties, which are particularly advantageous for achieving anisotropic etch profiles.…”
Section: Introductionmentioning
confidence: 99%