Abstract-A 12-bit 50MS/s SAR ADC implemented in 65nm CMOS technology is presented. The design employs redundancy to relax the DAC settling requirement and to provide sufficient room for errors such that the static nonlinearity caused by capacitor mismatches can be digitally removed. The redundancy is incorporated into the design using a tri-level switching scheme and our modified split-capacitor array to achieve the highest switching efficiency while still preserving the symmetry in error tolerance. A new code-density based digital background calibration algorithm that requires no special calibration signals or additional analog hardware is also developed. The calibration is performed by using the input signal as stimulus and the effectiveness is verified both in simulation and through measured data. The prototype achieves a 67.4dB SNDR at 50MS/s, while dissipating 2.1mW from a 1.2V supply, leading to FoM of 21.9f J/conv.-step at Nyquist frequency.
Abstract-Advanced CMOS processes need new methodologies to extract, characterize and model process variations and their sources. Most prior studies have focused on understanding the effect of local layout features on transistor performance; limited work has been done to characterize medium-range (≈ 10µm to 2mm) pattern density effects. We propose a new methodology to extract the radius of influence, or the range of neighboring layout that should be taken into account in determining transistor characteristics, for shallow trench isolation (STI) and polysilicon pattern density. A test chip, with 130k devices under test (DUTs) and step-like pattern density layout changes, is designed in 65nm bulk CMOS technology as a case study. The extraction result of the measured data suggests that the local layout geometry, within the DUT cell size of 6µm x 8µm, is the dominant contributor to systematic device variation. Across-die medium-range layout pattern densities are found to have a statistically significant and detectable effect, but this effect is small and contributes only 2-5% of the total variation in this technology.
In this paper, we discuss and analyze the effectiveness of redundancy (also known as digital error correction) and its relationship with DAC settling time, comparator delay, digital logic delay and sampling rate in successive-approximationregister (SAR) ADCs. Behavioral models of SAR ADCs are developed that are four orders of magnitude faster than simulations done in FastSPICE, to predict ADC time progression and to quickly identify the maximum sampling rate that can be used in both redundant and non-redundant cases. We show that redundancy does not always improve sampling rate; instead, the maximum sampling rate depends on the relative magnitudes of different ADC delay components. SPICE simulation in a 65nm CMOS process verifies our behavioral simulation results.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.