This paper describes an overall policy for the design of nanoelectronic systems, showing how specific properties of quantum devices can be exploited instead of being counteracted, by introducing unconventional design approaches. Single‐electron tunnelling (SET) circuit ideas, as components for neural networks, are described in more detail. It is argued that the orthodox theory of single‐electron devices is not appropriate for circuit design and simulation, and needs reconsideration. An overview of SET circuit designs for neural nodes is given. Copyright © 2000 John Wiley & Sons, Ltd.
General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract-In current steering Mixing-DACs with local mixing, timing errors between the current cells is a major concern. This paper considers two types of random timing errors: delay and duty-cycle. Analysis shows that the Mixing-DAC is sensitive to delay errors, but much less sensitive to duty-cycle errors. For the required high spectral purity of future 4GHz multicarrier GSM (SF DRRBW =85dBc), the delay spread σ(delay) should be <36fs. Therefore, only mixing in the output stage with a single LO driver can achieve the desired linearity.The presented analysis shows that the timing of the binary cells in the segmented converter is very important, especially in a back-off scenario. Simulations confirm that accurate capacitance scaling at the high-frequency nodes of the binary current cells is crucial. A new, back-off aware segmentation trade-off is proposed, which shows the impact of the SF DRRBW and backoff requirements on the segmentation choice.The proposed methods result in an optimal Mixing-DAC architecture, implemented in 65nm CMOS, with a simulated performance of SF DRRBW =86dBc at 4GHz output frequency and -16dB FS /tone output power (10dB back-off).
The availability of numerous mm communication has motivated the exploration of multi integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the perform account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. measurements using on-wafer probing at 60GHz has its own compl very short wave-length of the signals at mm measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixe Injection-Locked Frequency Divider amplifiers implemented in CMOS technologies. These results feasibility of the realization 60GHZ main stream CMOS technology.Driven by customer demands, the last two decades have experienced unprecedented progress in wireless portable devices capable of supporting multi standard applications. The all desire for untethered access to information and entertainment "on the go" has set AbstractThe availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. wafer probing at 60GHz has its own compl length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results of the realization 60GHZ integrated components and systems in main stream CMOS technology.
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