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Atomic-layer-deposited aluminium oxide (Al 2 O 3 ) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al 2 O 3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20Á6%. The best results are obtained for a stack consisting of a 30 nm Al 2 O 3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiO x ) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single-layer of Al 2 O 3 , resulting in a rear SRV of 90 cm/s.464 J. SCHMIDT ET AL. Thermal SiO 2 (220 nm) 90 AE 20 91 AE 1 Al 2 O 3 (130 nm) 90 AE 20 90 AE 1 Al 2 O 3 (30 nm)/SiO x (200 nm) 70 AE 20 91 AE 1

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