The floating catalyst chemical vapor deposition (FCCVD) method for producing single‐walled carbon nanotubes (SWNTs) has demonstrated great potential in transparent conductive film (TCF) application. In FCCVD, reducing the concentration of carbon nanotubes (CNTs) is a well‐agreed method of improving the conductivity of SWNT TCF, achieved by producing thinner and longer CNT bundles. However, this method decreases the yield dramatically, which has persisted throughout the TCF development. Here, the production of large‐diameter double‐walled CNT (DWNT) TCFs via FCCVD is reported, which overcomes the tradeoff between performance and yield. These TCFs of DWNTs with an average diameter of ≈4 nm have a low sheet resistance of 35 Ω sq−1 at 90% transmittance. The conductivity here aligns with the best‐performing SWNT TCFs reported to date, showing a production yield greater than two orders of magnitude. The main factor contributing to the high performance and yield is considered to be the large tube diameter, which greatly improves the yield threshold of CNT bundling and leads to long tube length and unique junctions broadening. Moreover, the application of DWNT TCFs in perovskite solar cells exhibits a power conversion efficiency of 17.4%, which has not been reported yet in indium‐free CNT‐based solar cells.

We report floating catalyst chemical vapour deposition synthesis of single-walled carbon nanotubes (SWCNTs) for high-performance transparent conducting films (TCFs) using low feeding rate of precursor solution. Herein, ethanol acts as carbon source, ferrocene and thiophene as catalyst precursor and growth promoter, respectively. By adopting a low feeding rate of 4 µl min−1, the fabricated TCFs present one of the lowest sheet resistances of ca 78 Ω sq.−1. at 90% transmittance. Optical characterizations demonstrate that the mean diameter of high-quality SWCNTs is up to 2 nm. Additionally, electron microcopy observations provide evidence that the mean length of SWCNT bundles is as long as 28.4 µm while the mean bundle diameter is only 5.3 nm. Moreover, very few CNT loops can be found in the film. Remarkably, the fraction of individual SWCNTs reaches 24.6%. All those morphology data account for the superior optoelectronic performance of our SWCNT TCFs.

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Graphene, carbon nanotubes (CNTs) and fullerenes are the basic set of low-dimensional carbon allotropes. The latter two arise from the former by selective removal and addition of carbon atoms. Nevertheless, given their morphological disparities, the production of each is typically devised from entirely different starting points. Here, it is demonstrated that all three allotropes can nucleate from (pseudo-)spherical, nanometer-sized transition metal clusters in a gas-suspension when the chemical conditions are favorable. The experimental results indicate that graphitic carbon embryos nucleate on the catalyst particles and sometimes transform into 2D graphene flakes through chain polymerization of carbon fragments forming in the surround gas atmosphere. It is further shown that hydrogenation reactions play an essential role by stabilizing the emerging flakes by mitigating the pentagon and heptagon defects that lead into evolution of fulleroids. Ab initio molecular dynamics simulations show that the ratio of hydrogen to carbon in the reaction is a key growth parameter. Since structural formation takes place in a gas-suspension, graphene accompanied by fullerenes and singlewalled CNTs can be deposited on any surface at ambient temperature with arbitrary layer thicknesses. This provides a direct route for the production and deposition of graphene-based hybrid thin films for various applications.

In this work, a fast approach for the fabrication of hundreds of ultraclean field-effect transistors (FETs) is introduced, using single-walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating-catalyst chemical vapor deposition, which is employed to fabricate high-performance thin-film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT-based FETs exhibit a mean fieldeffect mobility, which is 3.3 times higher than that of high-quality solutionprocessed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on-off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT-based FETs shed light on further study of contamination-free SWCNTs on various metal contacts and substrates.