Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

Abstract

In this work, a fast approach for the fabrication of hundreds of ultraclean field-effect transistors (FETs) is introduced, using single-walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating-catalyst chemical vapor deposition, which is employed to fabricate high-performance thin-film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT-based FETs exhibit a mean fieldeffect mobility, which is 3.3 times higher than that of high-quality solutionprocessed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on-off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT-based FETs shed light on further study of contamination-free SWCNTs on various metal contacts and substrates.

Suspended superconducting weak links from aerosol-synthesized single-walled carbon nanotubes

“…Thermophoretic precipitator and the deposition process are described in Refs. [30,31] and the FC-CVD process in Refs. [30,32].…”

“…In this paper we report a new scheme for fabrication of suspended ultra-clean SWCNT weak links. Our approach is based on the floating catalyst chemical vapour deposition (FC-CVD) growth of SWCNTs and direct deposition of pristine SWCNTs on prefabricated metallic electrodes at nearambient temperature [30,31]. To obtain good electrical contacts between these aerosol-synthesized SWCNTs and the electrodes, our devices are vacuum annealed at the last step of the fabrication process.…”

Direct Synthesis of Semiconducting Single‐Walled Carbon Nanotubes Toward High‐Performance Electronics

“…It was found that the I d -V ds has a linear characteristic at various V gs , which indicates that the contact of SWCNTs film with metal electrodes is an ohmic contact. Figure 4e presents the transfer curves of our fabricated TFTs at drain-source bias voltage V ds = -0.05 V and gate-source sweeping voltage V gs from -10 V to +10 V. Here, the common parallel plate model was used to extract the mobility (shown in Supplementary text 3), [18,38,45] although this method would overestimate the capacitance of the SWCNTs film and thus underestimate the value of the extracted carrier mobility. Figure 4f and Supplementary table 1 show the mobility and the I on /I off ratio of 20 SWCNTs TFTs (L ch = 100 μm), together with those of other TFTs based on CNTs film.…”

Topologically-imposed vacancies and mobile solid 3He on carbon nanotube

“…The CNTs were synthesized in the gas phase with the floating catalyst chemical vapour deposition growth method (FC-CVD) followed by the direct thermophoretic deposition onto prefabricated chips 39 . A suspended nanotube can be viewed as a doubly clamped string with the fundamental oscillation frequency where the spring constant k is determined by the line tension of the tube, controlled by the DC gate voltage.…”