FOM is a generally accepted performance MOSFET is mainly limited by its gate charge and switching and efficiency indicator for power MOSFETs. However, delays. Therefore, in order to optimize the power MOSFETs it is found that the traditional FOM can no longer for several MHz switching frequency, we need to design for provide a quick measure of the overall device smaller gate charge and input/output capacitances. Fig.1 performance for switched mode power supplies, illustrates the device cross-sectional views of a conventional especially for DC-DC converters using the low voltage trench gate power MOSFET and a standard CMOS structure. (sub-1OV) power MOSFETs fabricated in a deep The parasitic gate source and drain capacitances, Cgs and Cgd sub-micron CMOS technology. To give a subjective are as indicated in both devices. It is evident that the analysis, a new comparison method has been proposed standard CMOS inherently has a much smaller overlap area to compare the true overall device performance and between its polysilicon gate electrode and n+ source/drain power conversion efficiency. than the conventional trench gate power MOSFET. As a result, CMOS transistor offers a much lower gate
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