A Low-Voltage Lateral SJ-FINFET With Deep-Trench p-Drift Region

Yoo, Abraham; Onish, Y.; Xu, E.; Ng, Wai Tung

doi:10.1109/led.2009.2024013

Cited by 25 publications

(10 citation statements)

References 7 publications

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“…We have carefully examined trench depths ranging from 1.5 µm -3.0 µm in a step of 0.3 µm. We have observed that the difference in the doping concentration of the SJ n-and p-pillars becomes smaller as the trench depth is increased, also reported by [7]. For effective pathway to the SJ drift region, a trench depth of 2.7 µm (W side ) is chosen in this study.…”

Section: Device Structure Of Sj-mgfetsupporting

confidence: 56%

“…8 (b) illustrates the specific on-resistance profile along A-A cut-line of the SJ-MGFET under the charge balance condition with W side = 2.7 µm, and L drif t = 3.5 µm. In comparison with conventional SJ-LDMOSFET technology at the same voltage rating and channel length, the SJ-MGFET offers R on,sp of 8.9 µΩ.cm 2 and 0.204 mΩ.cm 2 at both channel and drift regions respectively; corresponding to 88% and 56% reduction [7]. Fig.…”

Section: Structure Optimisation Of Sj-mgfetmentioning

confidence: 97%

“…2 (all measurements are in µm). This transistor design follows closely the architecture of SJ-MGFETs reported in [6,7]. The whole transistor structure is grown on a buried oxide layer to mitigate the effect of substrateassisted depletion (SAD) [8,9,10].…”

Section: Device Structure Of Sj-mgfetmentioning

confidence: 99%

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Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Adenekan

Holland

Kálna

2018

Microelectronics Journal

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The design and optimisation of a non-planar super-junction (SJ) Si MOS-FET based on SOI technology for low voltage rating applications (below 100 V) is carried out with physically based commercial 3-D TCAD device simulations using Silvaco. We calibrate drift-diffusion simulations to experimental characteristics of the SJ multi-gate MOSFET (SJ-MGFET) aiming at improving drive current, breakdown voltage (BV), and specific on-resistance (R on,sp). We investigate variations in the device architecture and improve device performance by optimizing doping profile under charge imbalance. The SJ-MGFET, using a folded alternating U-shaped n/p-SJ drift region pillar width of 0.3 µm with a trench depth of 2.7 µm achieves specific on-resistance (R on,sp) of 0.21 mΩ.cm 2 at a BV of 65 V. In comparison with conventional planar gate SJ-LDMOSFETs, the optimised SJ-MGFET gives 68% reduction in R on,sp and 41% increase in a saturation drain current at a drain voltage of 5 V and a gate voltage of 10 V.

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Section: Device Structure Of Sj-mgfetsupporting

confidence: 56%

Section: Structure Optimisation Of Sj-mgfetmentioning

confidence: 97%

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Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Adenekan

Holland

Kálna

2018

Microelectronics Journal

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“…The cost down and tradeoff between breakdown voltage and on-resistance have always been major concerns. Many studies have proposed that their structures only need few masks [2][3][4][5]. However, they are still special processes, and need wire bonding to connect with main circuit.…”

Section: Introductionmentioning

confidence: 99%

A Novel Sub-20V Contact Gate MOSFET with Fully CMOS Compatible Process

Lee

Tsai

King

et al. 2012

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials

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“…Trench fabrication technology has grown over the years from a small scale venture to a large scale commercial enterprise with huge investments running into billion of dollars[99]. The trench gate MOSFET has been utilised for a wide-range of applications in the semiconductor technology such as the lateral trench MOSFETs and power integrated circuits[100], the trench IGBTs[101,102], and the trench SJ MOSFETs[103][104][105][106].The SJ concept has been employed to achieve a high BV and a low specific onresistance. However, the implementation of the lateral SJ transistor technology for low voltage (< 200 V) applications has not been attractive due to the fact that the channel resistance becomes comparable to the drift resistance at a low voltage ratings.…”

mentioning

confidence: 99%

Design and Scaling of Lateral Super-Junction Multi-Gate MOSFET by 3-D TCAD Simulations

Adenekan¹

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Bless the Lord, O my soul: and all that is within me, bless his holy name. I give all glory to the Almighty God for the successful completion of the research programme, without HIM I am nothing. Many thanks to my supervisor, Prof. Karol Kalna for his valuable guidance and support throughout my research programme at Swansea University. Also, I would like to thank my second supervisor, Dr. Paul M. Holland, for his support and insightful discussions all through the research work. I thank my colleagues, most especially John Macaulay and members of the research group for making the research experience interesting and educative. Many thanks to the Federal Government of Nigeria and the Management of Moshood Abiola Polytechnic, Abeokuta for the opportunity availed me to undergo my research programme in Swansea University, UK. I thank especially Samson and Taiwo Folorunso, Waliu Okunade, Abiodun Olubanjo, Simeon Afonja, Gbekeleoluwa, auntie Bimple, auntie Iyabo, Taiwo and Tobi Okeneye; for all the support they have given to me throughout my period of studying in UK. I thank all my friends and siblings for your pleasant and encouraging words in the course of the research. I am very thankful to Akeem and Sola Durotoye, for your extremely support both morally and financially. My thanks also go to my parents, and my in-laws who supported me morally and spiritually. To my Kids, a big thank you for your sacrifices without complaint and keeping the flags flying while I pursued further education. Last of all, I would like to thank my wife, Oyeyinka, she has always been a blessing and a strong pillar of support. Many thanks for the words of courage during those hard moments of the research work; most importantly you freed me from family responsibilities so that I can achieve my desire goal. v To my wife and my jewel of inestimable value, Oyeyinka and my lovely kids, Oluwadarasimi, Oluwadamisi and Oluwadabira.

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A Low-Voltage Lateral SJ-FINFET With Deep-Trench p-Drift Region

Cited by 25 publications

References 7 publications

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

A Novel Sub-20V Contact Gate MOSFET with Fully CMOS Compatible Process

Design and Scaling of Lateral Super-Junction Multi-Gate MOSFET by 3-D TCAD Simulations

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A Low-Voltage Lateral SJ-FINFET With Deep-Trench p-Drift Region

Cited by 25 publications

References 7 publications

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

A Novel Sub-20V Contact Gate MOSFET with Fully CMOS Compatible Process

Design and Scaling of Lateral Super-Junction Multi-Gate MOSFET by 3-D TCAD Simulations

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Product

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Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications