Spin-coated films, approximately 100 nm thick, of a newly synthesized bis[octakis(octyl)phthalocyaninato] lutetium(III) complex on ultrasonically cleaned glass substrates exhibit pronounced chemichromic behaviour with potential application in healthcare. In situ kinetic optical absorption spectroscopic measurements show that the phthalocyanine Q-band is red shifted by 60 nm upon oxidation arising from exposure to bromine vapour. Recovery to the original state is achieved by the treatment of the oxidized films with nicotinamide adenine dinucleotide and L-ascorbic acid (vitamin C) in an aqueous solution containing 1.5 M lithium perchlorate. The neutralization process is found to be governed by first-order kinetics. The linear increase of the reduction rate with increasing concentration of cofactors provides a basis for calibration of analyte concentrations ranging from 3.5 mM down to 0.03 mM.
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ABSTRACTThe current conduction process through a nanowire wrap-around-gate, ~50 nm channel diameter, silicon MOSFET has been investigated and compared with a ~2 μm wide slab, ~200 nm thick silicon (SOI) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and gate oxide thickness. The experimental characteristics of the nanowire and planar MOSFETs were compared with theoretical simulation results based on semiempirical carrier mobility models. The SOI nanowire MOS devices were fabricated through interferometric lithography in combination with conventional I-line lithography. A significant increase (~3×) in current density was observed in the nanowire devices compared to the planar devices. A number of parameters such as carrier confinement, effects of parallel and transverse field-dependent mobilities, and carrier scattering due to Coulomb effects, acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The electron mobility in the nanochannel increases to ~1200 cm 2 /V s compared to ~400 cm 2 /V s for a wide slab planar device of similar channel length. Experiments also show that the application of the channel potential from three sides in the nanowire structure dramatically improves the subthreshold slope characteristics. Abstract: The current conduction process through a nanowire wrap-around-gate, B50 nm channel diameter, silicon MOSFET has been investigated and compared with a B2 mm wide slab, B200 nm thick silicon (SOI) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and gate oxide thickness. The experimental characteristics of the nanowire and planar MOSFETs were compared with theoretical simulation results based on semi-empirical carrier mobility models. The SOI nanowire MOS devices were fabricated throug...
Electromagnetic energy transmitted through the gratings in the active region of a metal-semiconductor-metal detector was analyzed to account for enhanced collection efficiency. This study shows that a wall-like grating on the surface of the active region results in enhanced transmission of electromagnetic energy, which contributes to greater carrier production and higher collection efficiency. Analyses also show that the collection efficiency can be further improved with square gratings on the surface of the active region. A maximum in collection efficiency is achieved when the square gratings cover about 65.5% of the active region surface.
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