No abstract

A high-frequency ͑95 GHz͒ and conventional-frequency ͑9.3 GHz͒ pulsed electron paramagnetic resonance and electron-nuclear double resonance ͑ENDOR͒ study is reported on the deep boron acceptor in 6H-SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon position with an adjacent carbon vacancy. The carbon vacancy combines with a boron along the hexagonal c axis. It is concluded that 70-90 % of the spin density resides in the silicon dangling bonds surrounding the vacancy and another 9% on the neighboring carbon atoms. The spin-density distribution is more localized than in the case of the shallow boron acceptor as deduced from the ENDOR experiments.

No abstract

No abstract