Electronic structure of the deep boron acceptor in boron-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>-SiC

Duijn-Arnold, A. van; Ikoma, Tadaaki; Poluektov, Oleg G.; Баранов, П. Г.; Мохов, Е. Н.; Schmidt, Jan

doi:10.1103/physrevb.57.1607

Cited by 62 publications

(39 citation statements)

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“…19 Other groups proposed that this level is associated with a boron atom replacing a silicon atom with an adjacent carbon vacancy or an antisite with silicon in the carbon position. 20,21 It is believed that in the SiGe alloys, boron can act as a deeper defect under the influence of Fe i and Ge possibly explaining our observations. Following this scheme one can postulate a scenario for the behavior of the Fe i B pair in SiGe alloys.…”

Section: Resultsmentioning

confidence: 77%

“…At the same time, a second acceptor boron center, introducing a deeper level into the band gap with an activation energy about 0.65 eV, has been observed by some groups. [18][19][20] The origin of this deeper boron related acceptor level is uncertain and whether it corresponds to a deepening of the first shallow level caused by a nearby defect is still disputed. It has been suggested that it is connected with boron replacing a carbon atom ͑B C ͒.…”

Section: Resultsmentioning

confidence: 98%

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Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

et al. 2006

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Laplace transform deep level transient spectroscopy ͑LDLTS͒ is used to investigate the alloy effects on iron related deep centers in Si 1−x Ge x . A clear buildup of alloy disorder as a function of the germanium content has been observed for the isolated interstitial iron. However, due to specific features of the interstitial tetrahedral position of iron in the cubic lattice, it is not possible to say how many Ge atoms are responsible for the alloy-induced level splitting of the electronic state of the interstitial iron related defect. The observation of alloy splitting for the iron-boron pair has been used to resolve this issue. Different shells of nearest-neighbor atoms form the alloy pattern for both the interstitial isolated iron and the iron-boron pair. We show that for the iron-boron pair the occupied state is formed when a hole is closer to iron in the case of low germanium content. For more germanium rich alloy compositions the hole is bound by boron resulting in a dramatic change in the LDLTS peak structure. In an attempt to simulate the observed patterns, the alloying effects originating from different shells containing the defect were considered. A clear tendency for iron to form a pair with boron siting in germanium rich neighborhood is demonstrated. Finally, the influence of alloying on iron motion has been investigated. Similarities in the dissociation potential barrier heights of the iron-boron pair in pure silicon and Si 0.98 Ge 0.02 alloy suggest that the presence of Ge atoms induces only a second-order effect on the average diffusion barrier in alloys with low Ge content ͑less than 3%͒.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 98%

Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

et al. 2006

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“…Boron-related centers in SiC are known to have two key characteristics: a shallow acceptor with an ionization energy of about 0.30 eV and a deep level with an ionization energy of about 0.65 eV (Duijin-Arnold et al, 1998). While the nature of the shallow acceptor defect is accepted as an off-center substitutional boron atom at a silicon site (B Si ) (Duijin-Arnold et al, 1999), that of the deep boron-related level is not clear.…”

Section: Boron Diffusion In 4h-sic (A) Historic Backgroundmentioning

confidence: 99%

“…While the nature of the shallow acceptor defect is accepted as an off-center substitutional boron atom at a silicon site (B Si ) (Duijin-Arnold et al, 1999), that of the deep boron-related level is not clear. The B Si -V C pair (Duijin-Arnold et al, 1998) was refuted by ab initio calculations that suggest a B Si -Si C complex as a candidate (Aradi et al, 2001). In addition, candidates such as a substitutional boron atom at a carbon site (B C ) and a B C -C Si complex were also put forward (Bockstedte et al, 2001).…”

Section: Boron Diffusion In 4h-sic (A) Historic Backgroundmentioning

confidence: 99%

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Mochizuki¹

2011

Properties and Applications of Silicon Carbide

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“…Therefore, although no conclusive proof has yet been shown, B Si is generally associated with the shallow acceptor, and it has been suggested [4] that B C might be the deep acceptor. On the other hand, substantial amounts of the deep boron acceptor could only be produced by implantation [5], so, in addition (based on theoretical calculations [6]) an "isomer" of B C , B Si + Si C , as well as (based on paramagnetic resonance studies [7]) a complex with a carbon vacancy, B Si + V C , were also suggested as possible origins of the "deep" boron center. The latter assignment was, however, not supported by the calculations, while B Si + Si C was predicted considerably higher in energy than B C .…”

mentioning

confidence: 98%

“Some like it shallower” – p‐type doping in SiC

Deák

Aradi

Gali

et al. 2002

Physica Status Solidi (b)

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PACS 71.55.Ht, 71.55.Mb The usual p-type dopants of SiC, B, and Al, do not produce really shallow levels. In fact, boron can give rise to a secondary very deep acceptor level as well. The picture is complicated by hydrogen which is readily incorporated during in-growth doping into p-type material and can passivate both dopants but to a different degree. First principle calculations are reported regarding the interaction of hydrogen with B and Al in SiC. The results explain why hydrogen is incorporated in much higher amounts into B-doped than into Al-doped samples, and also reveal the influences of hydrogen on boron to produce the shallower acceptor. It will be shown that hydrogen incorporation during growth does not influence Al. Finally an Al -N -Al complex is proposed as a shallower acceptor in SiC.Introduction Silicon carbide is a wide band gap semiconductor intended for use in high power, high temperature electronics. This fact increases somewhat the tolerance for what can be termed a shallow level, still the traditional p-type dopants, boron and aluminium, seem to behave rather unsatisfactorily in SiC. Boron can produce a deep acceptor state about 0.55 eV above the valence band, as well as a shallower one at 0.30 eV [1], and it is not clear why the former appears. Aluminium gives only one level at about 0.21 eV [2], which is still too high for planned high-frequency devices operating at moderate temperatures. (Note that SiC comes in many different polytypes, the most important ones being the cubic 3C and the hexagonal 4H and 6H. The numbers here denote the number of inequivalent Si-C bilayers stacked on each other within one period along the cubic [111] or the hexagonal [0001] direction. Unless otherwise noted, values quoted refer to the 4H polytype.) Doping of SiC is complicated by two facts. For one, in a compound semiconductor dopants can choose between the two sublattices where they can behave rather differently. Second, the strong bonds and tight structure of SiC precludes diffusion doping. Therefore, doping may be achieved in growth during chemical vapour deposition (CVD) of homoepitaxial layers, or by implantation. The former procedure introduces hydrogen impurities, the latter causes intrinsic point defects -in both cases the dopants may form complexes.As for the site selection, the behaviour of Al is relatively predictable: it prefers the silicon site (Al Si ), where it fits in more conveniently, and produces the "shallow" acceptor level mentioned above. Boron, on the other hand, has been reported to occupy both, the silicon and the carbon site, alas, with preference for the Si site [3]. If SiC is grown under Si-rich conditions in CVD (offer of empty C sites for B), the boron incorporation is substantially lower than in the case of C-rich conditions (offer of empty Si sites). The latter (C-rich growth) produces the "shallow" acceptors mentioned above while the "deep" ones were observed in the former (Si-rich growth). Therefore, although no conclusive proof has yet been

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Electronic structure of the deep boron acceptor in boron-doped6H-SiC

Cited by 62 publications

References 25 publications

Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

“Some like it shallower” – p‐type doping in SiC

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