Spatial distribution of the electronic wave function of the shallow boron acceptor in 4<i>H</i>- and 6<i>H</i>-SiC

Duijn-Arnold, A. van; Mol, Jan A.; Verberk, R.; Schmidt, Jan; Мохов, Е. Н.; Baranov, Pavel V.

doi:10.1103/physrevb.60.15829

Cited by 29 publications

(19 citation statements)

References 23 publications

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“…While the nature of the shallow acceptor defect is accepted as an off-center substitutional boron atom at a silicon site (B Si ) (Duijin-Arnold et al, 1999), that of the deep boron-related level is not clear. The B Si -V C pair (Duijin-Arnold et al, 1998) was refuted by ab initio calculations that suggest a B Si -Si C complex as a candidate (Aradi et al, 2001).…”

Section: Boron Diffusion In 4h-sic (A) Historic Backgroundmentioning

confidence: 99%

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Mochizuki¹

2011

Properties and Applications of Silicon Carbide

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Section: Boron Diffusion In 4h-sic (A) Historic Backgroundmentioning

confidence: 99%

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Mochizuki¹

2011

Properties and Applications of Silicon Carbide

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“…14) While the nature of the shallow acceptor defect is accepted as an off-center substitutional boron atom at a silicon site (B Si ), 15) that of the deep boron-related level is not clear. The B Si -V C pair proposed by Duijin-Arnold et al 14) has been refuted by the ab initio calculations of Aradi et al, 16) who instead of this pair, proposed a B Si -Si C complex as a candidate.…”

Section: Introductionmentioning

confidence: 99%

Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

Mochizuki

Shimizu

Yokoyama

2009

jjap

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Reported profiles of high-temperature (500 C)-implanted boron ions diffused in 4H-silicon carbide at 1200 -1900 C for 5 -90 min were simulated through a ''dual-sublattice'' modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a ''semiatomistic'' simulation, in which silicon and carbon interstitials are regarded as the same interstitials (I) and silicon and carbon vacancies are regarded as the same vacancies (V). Diffusion of implanted boron ions is calculated from the initial concentration profiles of I and V by Monte-Carlo simulation assuming tentatively a probability of 50% that implanted boron ions will occupy carbon sublattices.

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“…continuous-wave (CW) [1][2][3][4][5][6] or in the pulsed mode [7][8][9][10][11], reflecting the potential offered by this technique. Applications of HF-EPR range from semiconductor materials [12] and inorganic coupled spin cluster systems [13,14] to transition metal centers [15][16][17][18][19] and organic radicals in proteins [20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

High-field/high-frequency EPR spectrometer operating in pulsed and continuous-wave mode at 180 GHz

et al. 2001

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A novel electron paramagnetic resonance (EPR) spectrometer is reported, which has been developed to allow pulsed EPR experiments with high sensitivity and time resolution at a microwave (MW) frequency of 180 GHz (G-band) and wavelengths of approximately 1.6 mm. This corresponds to a magnetic field of about 6.4 T for g -2 signals. The "hybrid" system architecture combines components of quasioptical as well as conventional MW techniques, making it possible to achieve excellent spectrometer performance with respect to sensitivity and time resolution. Quasioptical MW components have been used to design an MW circulator allowing high sensitivity and low bias operation in the reflection mode. A miniaturized, closed-type cylindrical cavity provides a high sample filling factor and an adequate MW field strength (B,) enhancement and thus permits reasonably short MW pulses (60 ns for a it/2 pulse) even with a moderate MW input power (15 mW at the cavity). Commercial quartz capillaries (up to 0.5 mm internal diameter) can be used as sample holders for a broad range of applications.

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Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC

Cited by 29 publications

References 23 publications

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

High-field/high-frequency EPR spectrometer operating in pulsed and continuous-wave mode at 180 GHz

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