Bis(trimethylsilyl)ethylamine (BTMSEA) was synthesized and characterized as CVD precursor for silicon carbonitride SiC x N y films synthesis (vapor pressure, thermodynamic modeling). SiC x Ny films were deposited by PECVD from BTMSEA in the temperature range of 100-700 o C using two additional gases (He or NH 3 ). FT-IR, Raman spectroscopy, ellipsometry, EDX, SEM, UV-Visible spectroscopy and nanoindentation tests were used for film characterization. FT-IR analysis showed that temperature increase lead to the transition from a low-temperature polymeric-like films to the high-temperature inorganic material. It was also shown that the high-temperature films content predominantly Si-C bonds independently on the additional gas type. As it was confirmed by Raman spectroscopy, hightemperature SiC x N y films content carbon phase. Ammonia addition into the reaction mixture resulted in the shift of the temperature boundary of carbon phase-free region. The transmittance of SiC x N y films obtained using BTMSEA + He mixture in the deposition temperature range of 100-500 o C was 85-95 % and decreased significantly in the case of carbon phase formation at T dep more than 500 o C. Optical band gap estimated from UV-Vis spectra varied in the range of 1.9-4.4 eV depending on the deposition temperature. NH 3 addition to initial mixture led to the film transmittance decrease to 80-90 %, the optical band gap changed in the range of 2.0-5.1 eV. Nanoindentation tests showed that hardness of the films synthesized at high temperature was 18.5-21.5 GPa.
Five volatile organosilicon compounds: trimethyl (phenyl)silane Me 3 SiC 6 H 5 (I), trimethyl(cyclohexyl)silane Me 3 SiC 6 H 11 (II), trimethyl(phenoxy)silane Me 3 SiOC 6 H 5 (III), trimethyl(cyclohexyloxy)silane Me 3 SiOC 6 H 11 (IV), and trimethyl(allyloxy)silane Me 3 SiOC 3 H 5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas-liquid chromatography; and 1 H NMR, 13 C NMR, 29 Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me 3 SiOC 6 H 5 , Me 3 SiC 6 H 5 , Me 3 SiC 6 H 11 , Me 3 SiOC 6 H 11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me 3 SiOC 3 H 5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II-V were determined for the first time.
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